Abstract
It has been recognized that the interdiffusion of atomic species between a PZT film and the Pt bottom electrode leads to the gradual degradation of a PZT capacitor. In order to prevent this interdiffusion, experimental studies on chemical passivation to the bottom electrode surface were carried out by the sulfurization method. It was observed that a sulfur layer was built up on the Pt substrate with small grains, which resulted in a structural change at the Pt surface. Atomic force microscopy (AFM) showed that the film roughness of the Pt surface was increased by sulfur treatment. Pb(Zr0.5Ti0.5)O3(PZT) thin films were prepared on a Pt/Ti/SiO2Si bottom electrode by spin-coating techniques. The microstructure and the preferred orientation of the PZT films were shown to depend on the sulfur-treated electrode. The PZT capacitor on a clean Pt electrode was confirmed to be ferroelectric with Pr=17.7 μC/cm2 and Ec=65 kV/cm from the P-E hysteresis curves. The fatigue behavior of a PZT film capacitor prepared on a sulfur-treated one was observed to be relaxed, but the absolute value of Pr was paid off.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Chung, C. W. and Kim, D., “Metalorganic Chemical Vapor Deposition of Ferroelectric Pb(ZrxTi1-x)O3 Thin Film”,Korean J. Chem. Eng.,14(2), 136 (1997).
Desu, S. B. and Yoo, I. K., “Ferroelectric PbZrxTi1-xO3 Thin Films Grown by Organometallic Chemical Vapor Depositon”, Proc. 4th Int. Symp. Integrated Ferroelectrics, Monterey, 640 (1990).
Dormans, G. J. M., Keijer, M. de and Veldhaven, P. J. Van., “Ferroelectric PbZrxTi1-xO3 Thin Films Growns by Organo-metallic Chemical Vapor Depositen”, Proc. Symp. Mat. Res. Soc., 203 (1992).
Maeda, F., Watanabe, Y. and Oshima, M., “Surface Chemical Bonding of (NH4 2S-treated InP(001)”,Appl. Phys. Lett.,62(3), 297 (1993).
Makamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., “Preparation of Pb(Zr,Ti)O3 Thin Films on Ir and IrO2 Electrode”,Jpn. J. Appl. Phys.,33, 5207 (1994).
Mihara, T., Watanabe, H. and Araujo, Carlos A. Paz De, “Polarization Fatigue Characteristics of Ferroelectric Pb (Zr, Ti)O3 Thin Film Capacitors”,Jpn. J. Appl. Phys.,33, 3996 (1994).
Nannichi, Y. and Oigawa, H., “The Effects of Sulfur on the Surface of III-IV Component Semiconductors”, Extended Abstracts of 22nd Int. Conf. on Solid State Devices and Materials, Sendai, 453 (1990).
Ohno, H., Kamanishi, H., Akagi, Y., Nakajima, Y. and Hijikata, T, “AES and XPS Studies of Surface of AlxGa1-xAs (110) Treated by Ammonium Sulfide”,Jpn. J. Appl. Phys.,29(11), 2473 (1990).
Oigawa, H., Fan, J., Nannichi, Y., Sugahawa, H. and Oshima, M., “Universal Passivation Effects of (NH4)2Sx Treatment on the Surface of III-IV Component Semiconductors”,Jpn. J. Appl. Phys.,30, L322 (1991).
Scott, J. F., Melnick, B. M., Araujo, C. A., McMillan, L. D. and Zuleeg, R., “d.c. Leakage Currents in Ferroelectric Memories”, Integrated Ferroelectrics,1, 323 (1992).
Spierings, G. A. C. M., Ulenaers, M. j. e., Kampschoer, G. L. M., van Hal, H. A. M. and Larsen, P. K., “Preparation and Ferroelectric Properties of PbZr0.53Ti0.47O3 Thin Films by Spin Coating and Metalorganic Decomposition”,J. Appl. Phys.,70(4), 2290 (1991).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Jeon, B.S., Yoo, J.S. The influence of chemical passivation on the PZT/Pt electrode interface. Korean J. Chem. Eng. 15, 85–89 (1998). https://doi.org/10.1007/BF02705310
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02705310