Abstract
We have investigated cleaning solutions based on citric acid (CA) to remove metallic contaminants from the silicon wafer surface. Silicon wafers were intentionally contaminated with Fe, Ca, Zn, Na, Al and Cu standard solution by spin coating method and cleaned in various CA-added cleaning solutions. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). And the surface micro-roughness was also measured by atomic force microscopy (AFM) to evaluate the effect of cleaning solutions. It was found that acidic CA/H2O solution has the ability to remove metallic contaminants from silicon surfaces. Fe, Ca, Zn and Na on silicon surface were decreased from the order of 1012 atoms/cm2 to the order of 109 atoms/cm2 even at low CA concentration, low temperature of CA solution and with short immersion time. CA was also effective in alkali cleaning solution. Fe, Ca, Zn, Na and Cu were reduced down to the order of 109 atoms/cm2 in CA added with NH4OH/H2O2/H2O solution without degradation of surface micro-roughness.
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References
Chung, S. P., Chang, K. H., Lee, K. T., Kwon, Y. M., Hah, S. R., Moon, J. T. and Lee, S. I.,“Evaluation of Chelate added APM Cleaning Solution,”The Electrochemical Society Proceedings Series, PV 99-36, 114 (2000).
Hall, L. H., Sees, J. A. and Schmidt, B. L.,“Characterization and Application of the Vapor Phase Decomposition Technique for Trace Metal Analysis on Silicon Oxide Surfaces,”SURFACE AND INTER-FACE ANALYSIS,24, 511 (1996).
Hourai, M., Naridomi, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N. and Shirawa, T.“A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer,”Jpn. J. Appl. Phys.,12, L2361 (1988).
Kern, W.,“Handbook of Semiconductor Wafer Cleaning Technology,” Noyes Publications, New Jersey (1992).
Kern, W.,“The Evolution of Silicon Wafer Cleaning Technology,”J. Electrochem. Soc.,137, 1887 (1990).
Kim, C. K., Chung, C. H. and Moon, S. H.,“Removal of Organic Impurities from the Silicon Surface by Oxygen and UV Cleaning,”Korean J. Chem. Eng.,13, 328 (1996).
Leowenstein., L. M. and Mertens., P. W.,“Competitive Adsorption of Cations onto Silicon Surface,”/Electrochem. Soc.,146, 3886 (1999).
Mertens, P. W., Loewentein, L. M., Vos, R., De Gendt, S., Bearda, T. and Heyns, M. M.,“Wafer Cleaning: A Quantifiable Process Step,”The Electrochemical Society Proceedings Series, PV 98-1,592 (1998).
Mori, Y., Uemura, K. and Shimanoe, K,“Adsorption Species of Transition Metal Ions on Silicon Wafer in SC-1 Solution,”J. Electrochem. Soc.,142, 3104 (1995).
Morinaga, H. and Ohmi, T.,“Electrochemical Deposition and Removal of Metallic Impurities on Si Substrates,”The Electrochemical Society Proceedings Series, PV 95-20,257 (1995).
Morinaga, H., Aoki, M., Maeda, T., Fujisue, M., Tanaka, H. and Toyoda, M.“Advanced Alkali Cleaning for Simplification of Semiconductor Cleaning Process,” Proceeding of Material Research Society 1997 Spring Meetings, Symposium P (The Science and Technology of Semiconductor Surface Preparation), 35 (1997).
Morita, H., Joo, J. D., Messoussi, R., Kawada, K., Kim, J. S. and Ohmi, T.,“Passivation of Cu Particles on Si Substrate by FOM(HF+O3- UPW) Solution,”The Electrochemical Society Proceedings Series, PV 97-35,147 (1995).
Mouche, L., Tardif, F. and Derrien, J.,“Mechanism of Metallic Impurity Deposition on Silicon Sunstrates Dipped in Cleaning Solution,”J. Electrochem. Soc.,142, 2395 (1995).
Ohmi, T., Imaoka, T., Kezuka, T., Takano, J. and Kogure, M.,“Segregation and Removal of Metallic Impurity of Interface of Silicon and Fluorine Etchant,”J. Electrochem. Soc.,140, 811 (1993).
Ohmi, T.,“Total Room Temperature Wet Cleaning for Si Substrate Surface,”J. Electrochem. Soc.,143, 2957 (1996).
Ridley, R. S., Grebs, Sr., T., Trost, J., Webb, R., Schuler, M., Longenberger, R. F., Fenstemacher, T. and Caravaggio, M.,“Advanced Aqueous Wafer Cleaning in Power Semiconductor Device Manufacturing,” 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 235 (1998).
Shiramizu, Y., Watanabe, K., Tanaka, M., Aoki, H. and H. Kitajima,“Removal of Metal and Organic Contaminants from Silicon Substrates Using Electrolysis-Ionized Water Containing Ammonium Chloride,”J. Electrochem. Soc.,143, 1632 (1996).
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Chung, HY., Kim, KS., Cho, HY. et al. Evaluation of citric acid added cleaning solution for removal of metallic contaminants on Si wafer surface. Korean J. Chem. Eng. 18, 342–346 (2001). https://doi.org/10.1007/BF02699175
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DOI: https://doi.org/10.1007/BF02699175