Abstract
Heat transfer between a wafer and electrode has been studied in a planar-type inductively coupled plasma reactor in terms of temperatures of wafer, chamber wall and electrode. A substantial increase in the wafer temperature was attributed mainly to bombardment of incident ions onto the wafer surface. The decrease in the wafer temperature at a higher pressure was attributed to the decrease in plasma density and a resistance to heat transfer in a micro gap formed between the wafer and the electrode. Compared to the case of no rf-chuck power applied, the wafer temperature when the electrode was biased with 13.56 MHz if power showed a greater increase mainly due to increased ion bombardment. Since the electrode having a water-cooled-backside geometry gains heat from the bulk plasma, it may lead to fast etch rates of hard materials whose etch products are less volatile at low temperatures, but not be good for photoresist materials.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Cho, B.-C., Im, Y. H. and Hahn, Y B., “Fast Dry Etching of Doped GaN Films in Cl2-Based Inductively Coupled High density Plasmas”,J. Kor. Phys. Soc.,37,23 (2000).
Givens, J., Lee, J., Cain, O., Marks, J., Keswick, P. and Cunningham, C., “,Selective Dry Etching in a High Density Plasma for 0.5 Μm Complementary Metal-Oxide-Semiconductor Technology”,J. Vac. Sci. Technol. B,12,427 (1994).
Hahn, Y B. and Pearton, S. J., “Global Self-Consistent Model of an Inductively Coupled Plasma Etching System”,Korean J. Chem. Eng.,17, 304 (2000).
Hahn, Y B., Hays, D. C., Cho, H., Jung, K. B., Lambers, E. S., Abernathy, C. R, Pearton, S. J., Hobson, W. S. and Shul, R. J., “Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part I. GaAs, GaSb and AlGaAs”,Plasma Chem. Plasma Proc,20(3), 405 (2000).
Hahn, Y B., Hays, D. C., Cho, H., Jung, K. B., Lambers, E. S., Abernathy, C. R, Pearton, S. J., Hobson, W. S. and Shul, R. J., “Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs”,Plasma Chem. Plasma Proc,20(3), 417 (2000).
Park, J. S., Kim, T. H., Choi, C. S. and Hahn, Y.-B., “Dry Etching of SrBi2Ta2O9: Comparison of Inductively Coupled Plasma Chemistries”, accepted,Korean J. Chem. Eng. (2001).
Hahn, Y. B. and Kim, D. O., “Structural and Electrical Properties of SrTiO3Thin Films Prepared by Plasma Enhanced Metal Organic Chemical Vapor Deposition”,J. Vac. Sci. Technol. A,17(4), 1982 (1999).
Kim, D. O., Choi, R. J., Nahm, K. S. and Hahn, Y B., “Growth Characteristics and Deposition Mechanism of SrTiO3 Thin Films by Plasma Enhanced MOCVD”,J. Vac. Sci. Technol. A,18(2), 361 (2000)
Hahn, YB, Lee, J. W., Vawter, G A., Shul, R I, Abernathy, C. R, Hays, D., Lambers, E. S. and Pearton, S. J., “Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl2-Ar Mixture”,J. Vac. Sci. Technol. B,17(2), 366 (1999).
Hahn, Y B., Hays, D. C, Donovan, S. M., Abernathy, C. R, Han, J., Shul, R. J., Cho, H, Jung, K. B. and Pearton, S. J., “Effect of Additive Noble Gases in Chlorine-Based Inductively Coupled Plasma Etching of GaN, InN and AlN”,J. Vac. Sci. Technol. A,17(3), 763 (1999).
Kiihanmaki, J. and Franssila, S., “Deep Silicon Etching in Inductively Coupled Plasma Reactor for MEMS”,Physica Scripta., T79 (1999).
Lee, J. W., Mackenzie, K. D., Johnson, D., Shul, R. J., Hahn, Y B., Hays, D. C, Abernathy, C. R., Ren, F. and Pearton, S. J., “Damage to m-V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition”,J. Vac. Sci. Technol. A,17(4), 2183 (1999).
Liberman, M. A. and Lichtenberg, A. J., “Principles of Plasma Discharges and Materials Processing”, John Wiley & Sons, Inc., N. Y. (1994).
Ono, K. and Tuda, M., “Profile Evolution during Cold Plasma Beam Etching of Silicon”,Jpn. J. Appl. Phys.,36,4854 (1997).
Pearton, S. J., Emerson, A. B., Chakrabarti, U. K., Lane, E., Jones, K. S., Short, K. T, White, Alice E. and Fullowan, T. R., “Temperature Dependence of Reactive Ion Etching of GaAs with CC12F2: O2”,J. Appl. Phys.,66, 3839 (1989).
Tretheway, D. and Aydil, E. S., “Modeling of Heat Transfer and Wafer Heating Effects during Plasma Etching”,J. Electrochem. Soc,143, 3674 (1996).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Im, Y.H., Hahn, YB. Heat transfer between wafer and electrode in a high density plasma etcher. Korean J. Chem. Eng. 19, 347–350 (2002). https://doi.org/10.1007/BF02698427
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02698427