Abstract
Amorphous Si:F:H with desirable properties for photovoltaic applications can be fabricated by the glow discharge of SiF4 and H2. The preparation conditions influence the properties of the resultant alloy. For instance, altering the ratio of SiF4 to H2 from 80 to 5 can alter the localized state density from 1019cm−3eV−1 to ≃ 1016cm−3eV-1, respectively. The conduction mechanisms are altered and there are vast changes in the photoconductivity as the density of recombination centers is decreased. The lower density of states achieved in the a-Si:F:H alloy reflects in the ease of doping. In addition, the lower density of states in a-Si:F:H alloy should result in a wider depletion region than reported for the a-Si:H alloy when fabricated within the device configuration. Results of C-V measurements using Au Schottky barrier devices confirm this.
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Madan, A., Ovshinsky, S.R., Czubatyj, W. et al. Some electrical and optical properties of a-Si:F:H alloys. J. Electron. Mater. 9, 385–409 (1980). https://doi.org/10.1007/BF02670856
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DOI: https://doi.org/10.1007/BF02670856