Abstract
In1−xGaxP has been prepared over the entire alloy system by an epitaxial vapor-phase growth technique. The energy gap dependence on alloy composition for these layers has been determined by optical absorption, Schottky-barrier photoresponse, and electroluminescence measurements. These measurements indicate a nonlinear dependence of the (direct) conduction band minimum on In1−xGaxP composition, and a direct-indirect energy gap crossover at 2.20 ev and 70 pct GaP at room temperature. Zinc-diffusedp-n junctions have been formed in the In1−xGaxP layers, and have been found to be reasonably well-behaved in regard to their I-V and C-V characteristics, and their photoresponse. The electroluminescent emission spectra contain a narrow high-energy near-bandgap peak, but are frequently dominated by low-energy impurity peaks. For indirect-bandgap alloys, impurity peaks lie approximately 0.25 and 0.5 ev less than bandgap. A third peak is found at an energy of 1.30 to 1.35 ev independent of composition, forx > 0.4.
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This manuscript is based on a paper presented at the annual conference sponsored by the Electronic Materials Committee of the Institute of Metals Division of the Metallurgical Society of AIME and held August 30–September 2, 1970, in New York City.
R. B. CLOUGH, Formerly with RCA Laboratories.
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Nuese, C.J., Richman, D. & Clough, R.B. The preparation and properties of vapor-grown In1−xGax P. Metall Trans 2, 789–794 (1971). https://doi.org/10.1007/BF02662737
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DOI: https://doi.org/10.1007/BF02662737