Abstract
The fabrication and characterization of silicon p-n junction solar cells with various glow discharge, unanalyzed, molecular implanted emitter regions is described. Total area simulated air mass one (AM1) power conversion efficiencies without AR coatings or back surface fields are at best 8.2% compared to 9.1% for conventionally implanted or POC13 thermally diffused cells on similar substrates. To achieve optimum performance, Q-switched ruby laser light was incorporated into the molecular implant annealing procedure. Conversion efficiencies greater than 8% were achieved with the four dopants BC13, PC13 AsF3 and POC13. For similar processing, conversion efficiency with BF3 implants was less than those of previous investigations, most likely due to poor crystalline regrowth of the heavily doped emitter regions. Cell quantum efficiency and mesa junction ideality are shown to be similar to those of conventional cells while molecular implant sheet resistance values varied, generally being directly related to the dopant molecular weight.
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R.T. Young, R.F. Wood, J. Narayan, C.W. White and W.H. Christie, IEEE Trans. Electron DevicesED-27, 807 (1980).
A.R. Kirkpatrick, J.A. Minnucci and A.C. Greenwald, Proc. IEEE Photo. Spec. Conf., 14th, 820 (1980).
E.C. Douglas and R.V. D’Aiello, IEEE Trans. Electron DevicesED-27, 792 (1980).
P. Ostoja, S. Solmi and A. Zani, J. Appl. Phys.52, 6208 (1981).
C.W. White, J. Narayan and R.T. Young,Laser-Solid Interactions and Laser-Processing-1978, S.D. Ferris, H.J. Leamy and J.M. Poate, eds., American Institute of Physics, New York (1979), p. 275.
R.T. Young, R.F. Wood, W.H. Christie and G.E. Jellison, Jr., Appl. Phys. Lett. 39, 313 (1981).
R.T. Young, C.W. White, J. Narayan, R.D. Westbrook, R.F. Wood, and W.H. Christie, Proc. IEEE Photo. Spec. Conf., 13th, 717 (1978).
D.G. Beanland, Solid-State Electron. 21, 537 (1978).
S. Prussin, Proc. of the Fourth International Conf. on Ion Implantation, 449 (1975).
B.A. Maclver and E. Greenstein, J. Electrochem. Soc.124, 273 (1977).
H. Müller, H. Ryssel and I. Ruge, Proc. of the Second International Conf. on Ion Implantation in Semiconductors, 85 (1971).
R.G. Wilson,Low-energy Ion Beams 1977, K.G. Stephens, I.H. Wilson, and J.L. Moruzzi, eds., The Institute of Physics, London (1978).
R. Wichner and E.J. Charlson, J. Electron. Mater. 5, 513 (1976).
J.P. Ponpon and P. Siffert, Proc. IEEE Photo. Spec. Conf., 11th, 342 (1975).
J.C. Muller, A. and J.J. Grob, R. Stuck and P. Siffert, Proc. IEEE Photo. Spec. Conf., 13th, 711 (1978).
J.G. McCallum, G.I. Robertson, A.F. Rodde, B. Weissman and N. Williams, J. Vac. Sci. Technol. 15, 1067 (1978).
B. Chapman,Glow Discharge Processes, John Wiley and Sons, New York (1980).
L.T. Lamont, Jr., private communication.
P.D. Parry, J. Vac. Sci. Technol. 14, 622 (1976).
L.T. Lamont, Jr., Solid State Technol. 22, 107 (1979).
G. Dearnaley, J.H. Freeman, R.S. Nelson and J. Stephen,Ion Implantation, North-Holland Publishing Co., Amsterdam (1973).
L.J. Chen and I.W. Wu, J. Appl. Phys.52, 3310 (1981).
G. Carter, J.S. Colligon and J.H. Leck, Proc. Phys. Soc.79, 299 (1962).
E.F. Krimmel and H. Pfleiderer, Radiat. Effects19, 83 (1973).
J.H. Freeman,Applications of Ion Beams to Materials 1975, G. Carter, J.S. Colligon and W.A. Grant, eds., The Institute of Physics, London (1975), p. 340.
F.M. Smits, Bell System Tech. J.37, 711 (1958).
H.J. Leamy, G.A. Rozgonyi, T.T. Sheng and G.K. Celler, Appl. Phys. Lett. 32, 535 (1978).
G.N. Maracas, G.L. Harris, C.A. Lee and R.A. McFarlane, Appl. Phys. Lett. 33, 453 (1978).
J. Narayan in Inst. Phys. Conf. Series No. 60,Microscopy of Semiconducting Materials 1981, A.G. Cullis, D.C. Joy, Eds., Inst. of Physics, London (1981), p. 101.
G.J. van Gurp, G.E.J. Eggermont, Y. Tamminga, W.T. Stacy and J.R.M. Gijsbers, Appl. Phys. Lett.35, 273 (1979).
R.W. Rostron, IEEE Trans. Electron DevicesED-19, 1024 (1972).
A.W. Fisher and J.A. Amick, J. Electrochem. Soc.113, 1054 (1966).
J. Mandelkorn and J.H. Lamneck, Jr., Proc. IEEE Photo. Spec. Conf., 9th, 66 (1972).
J.L. Benton, L.C. Kimerling, G.L. Miller, D.A.H. Robison and G.K. Celler,Laser and Electron Beam Processing of Materials, C.W. White and P.S. Pearcy, eds., Academic Press, New York (1980), pp. 430–434.
A. Mesli, J.C. Muller, D. Salles and P. Siffert, Appl. Phys. Lett.39, 159 (1981).
J. Lindhard, M. Scharff and H.E. Schiøtt, Kgl. Danske Videnskab Selskab. Mat. Fys Medd.33, 14 (1963).
E. Fogarassy, R. Stuck, J.C. Muller, A. and J.J. Grob, P. Siffert, Y. Salles and D. Diguet, Proc. European Communities Photo. Solar Energy Conf., 2nd, 768 (1979).
D.G. Beanland, W. Temple and D.J. Chivers, Solid-State Electron.21, 357 (1978).
M.A. Shibib and J.G. Fossum, J. Appl. Phys. 52, 1072 (1981).
R.T. Young, R.F. Wood and W.H. Christie, J. Appl. Phys. 53, 1178 (1982).
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Work submitted in partial fulfillment of Ph.D. in Electrical Engineering at the Univ. of Missouri, Columbia, MO 65211
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Caine, E.J., Charlson, E.J. Junction solar cells made with molecular beam glow discharge bombardment. J. Electron. Mater. 13, 341–372 (1984). https://doi.org/10.1007/BF02656684
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DOI: https://doi.org/10.1007/BF02656684