Abstract
ZrO2 layers were deposited for the purpose of obtaining high dielectric constant insulating layers for capacitance applications. Trifluoroacety lacetonate of zirconium was used as the source material in our open MOCVD system. Layer thickness was in the range 300–1500 Å, the substrate being degenerate n-type silicon wafers. Under optimum conditions layers with good adhesion and uniformity were obtained. The layers were polycrystalline with characteristic linear dimensions of 400 Å. Electrical measurements were used for characterization and the relative dielectric constants obtained were 30 ± 1.
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References
H.M. Manasevit, J. Crystal Growth55, 1 (1981) and other papers in this Journal55, 1-262 (1981) which reported the Proceedings of the International Conference on Metal Organic Vapor Phase Epitaxy.
K. Ohta, K. Yamada, K. Shimizu and Y. Tarui, IEEE Trans. Electron DevicesED-29, 368 (1982).
R.N. Tauber, A.C. Dumbri and R.E. Caffrey, J. Electrochem. Soc.118, 747 (1971).
K.J. Sladek and W.W. Gibert, in “Proceedings of the Third International Conference on Chemical Vapor Deposition” p. 215 (1973).
M. Balog, Ph.D. Thesis, The Hebrew University of Jerusalem (April 1975); M. Balog, M. Schieber, M. Michmann and S. Patai, Thin Solid Films41, 247 (1977).
M.L. Morris, R.W. Moshier and R.E. Sievers, Inorg. Synthesis IX, 50 (1969).
G.A. Domrochev, E.V. Snitova, V.Yu. Vodzinskii, O.N. Suvorova, V.A. Varyukhin and B.A. Nesterov, Dokl Akad. Nauk, SSSR (Chem.)226, 1080 (1976).
M. Daugherty and B.K. Janousek, Appl. Phys. Lett.42, 290 (1983).
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Ben-Dor, L., Elshtein, A., Halabi, S. et al. Thin films of ZrO2 metal organic chemical vapor deposition. J. Electron. Mater. 13, 263–272 (1984). https://doi.org/10.1007/BF02656679
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DOI: https://doi.org/10.1007/BF02656679