Abstract
Ga1-x}Inx}As epitaxial layers have been deposited on GaAs substrates using the technique of organometallic pyrolysis (metalorganic chemical vapour deposition). The deposition was performed in a laminar flow, resistively heated, reactor. Both n and p-type (1017}-1018} carriers/cm3}) epitaxial layers, several microns thick,were prepared, with values of x in the range 0 ≤x ≤0.3. Epitaxial layer characterisation was carried out using conventional electrical, optical and x-ray techniques. Restricted emitting area (50–75 µm diameter) zinc-diffused LED’s were prepared in ungraded epitaxial layers with emission spectral peaks in the range 0.9 —1.15 ym. External quantum efficiencies of these devices decreased rapidly with increasing x, from∼0.4% for GaAs LED’s to∼0.02% for Gao.0.75}In0.25}As LED’s.
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Noad, J.P., SpringThorpe, A.J. The preparation of Gal-x Inx As by organometallic pyrolysis for homojunction LED’S. J. Electron. Mater. 9, 601–620 (1980). https://doi.org/10.1007/BF02652939
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DOI: https://doi.org/10.1007/BF02652939