Abstract
The chemical structure of the solution-grown PbS-Si hetero-junction was studied by Auger Electron Spectroscopy. Auger depth profiles indicate a PbS film of uniform composition. No major contaminants were observed in the bulk of the PbS film. At the PbS-Si interface the only impurity observed was an oxygen peak, corresponding to approximately 1% atomic concentration. Heating the growth solution enhances the chemical reaction and deposition rates without altering the profiles of the elements at the interface. Similar oxygen peaks were detected at the Au-PbS interface and at the interface between consecutive PbS films. The interface oxygen concentration in the PbS-Si (100) structure is roughly twice that present in the PbS-Si (111) structure. Heat treatment in air increased the interface and surface oxygen concentration by a factor of 2 to 5. The same treatment in N2} ambient had only a slight effect on the surface oxygen concentration but enhanced the interface oxygen concentration. The oxygen at the Au-PbS interface showed similar sensitivity to heat treatment. Oxygen content at the interface of HJs formed on unpolished Si was double that in HJs formed on polished Si. The relative intensity of the S to Pb peaks in the bulk of the PbS film compares closely with that measured on the cleaved surface of natural single crystal galena. The Pb: S peak ratio was roughly constant throughout the PbS film and at the PbS-Si interface. Fe and Cl contaminants were observed at the surface of the PbS film, along with significant changes in the Pb:S ratio. The simultaneous detection of Pb, S and Si near the interface is attributed to the presence of surface irregularity caused by a secondary PbS macrostructure consisting of isolated chain-like clusters.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
H. Elabd and A. J. Steckl, J. Vac. Sci. Tech.15, 264 (1978).
H. Elabd and A. J. Steckl, J. Appl. Phys. 51., (1980) .
A. J. Steckl, H. Elabd and T. Jakobus, Tech. Digest IEDM, IEEE Cat. No. 77 CH 12757ED, 549, (1977).
A. J. Steckl, M. E. Motamedi and S. P. Sheu, Proc. IRIS,132900-4-x, 401, (1978).
A. J. Steckl, M. E. Motamedi, S. P. Sheu, H. Elabd and K. Y. Tarn, Proc. CCD ’78 Conference, 239, San Diego, CA (1978).
P. Auger, Surface Science48, 1 (1975).
R. W. Weber and A. L. Johnson, J. Appl. Phys.38, 4355 (1967).
J. H. Richardson and R. V. Peterson,Systematic Materials Analysis, Academic Press, N.Y. (1974).
C. Chuan Chang, Surface Science25, 53 (1971).
P. R. Norton, R. L. Tapping and J. W. Goodale, Surface Science65, 13 (1977).
Paul W. Palmberg, et al.Handbook of Auger Electron Spectroscopy, Physical Electronics Industries Inc., Edina, Minnesota (1972), and Information from The Analytical Lab. of Physical Electronics Industries, Inc.
L. J. Hillenbrand, J. Chem. Phys.41, 3971 (1964), and L. J. Hillenbrand, J. Phys. Chem. 7,3, 2902 (1969).
R. N. Lee, J. de Phys.29, C4–43 (1968).
Yu A. Zarif ’yants and V. V. Kuryler., Sov. Phys. Semicond.7, 3, 414 (1973).
M. S. Said and J. N. Zemel, J. Appl. Phys.47, 3, 866 (1976).
P. H. Holloway, Physical Electronics Industries, Inc. (unpublished).
H. Elabd, A. J. Steckl, W. Vidinski, Presented to the Photovoltaic Material and Device Workshop, Arlington, VA. (1979) and H. Elabd, A. J. Steckl, W. Vidinski Solar Cells,2, (1979).
J. S. Johannessen, W. E. Spicer and Y. E. Strausser, J. Appl. Phys.47, 7, 3028 (1976); C. R. Helms, W. E. Spicer and N. M. Johnson, Solid State Commun.25, 673 (1978); and C. M. Garner, C. Y. Su, W. E. Spicer, P. D. Edward, D. Miller, and J. S. Harris, Appl. Phys. Lett.34, 610 (1979).
I. M. Kolthoff and P. J. Elving,Treatise on Analytical Chem. Part II,2, 121, Sect. A. (1962).
G. Y. Robinson, J. Vac. Sci. Tech.13, 884 (1976).
T. Grandke and M. Cardona (unpublished).
J. M. Poate, K. N. Tu, and J. W. Mayer.Thin Films Interdiffusion and Reactions″, John Wiley Inc. (1978).
Author information
Authors and Affiliations
Additional information
This paper was presented in part at the Electronic Materials Conference, June 1979, Boulder, CO.
Rights and permissions
About this article
Cite this article
Elabd, H., Steckl, A.J. Auger analysis of the PbS-Si heterojunction. J. Electron. Mater. 9, 525–549 (1980). https://doi.org/10.1007/BF02652934
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02652934