Abstract
Ohmic contacts have been fabricated onn-type InP with an alloyed AuGe based metallurgy that involved ion milling prior to metallization. Minimum values for contact resistance and specific resistance of 0.015Ω-mm and 3.2 × 10−8 Ω-cm2, respectively, were found with an annealing temperature in the range, 440–480° C. Addition of Ni to the contact metallurgy improves the wetting characteristics of the AuGe and lowers the contact resistance. It is proposed that ion milling prior to metallization results in a reactive metal-semiconductor interface and low contact resistance values for samples with and without Ni.
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Dunn, J., Stringfellow, G.B. Annealed AuGe based Ohmic contacts on InP with ion milling prior to metallization. J. Electron. Mater. 19, L1–L3 (1990). https://doi.org/10.1007/BF02651748
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DOI: https://doi.org/10.1007/BF02651748