Abstract
We present the results on the characterization and interdiffusion behavior of Ge m Si n strained layer superlattices (SLS’s) composed of alternating monolayers of pure Ge and pure Si. Such Ge m Si n SLS’s were grown on top of thick relaxed Ge y Si1-y buffer layers so as to symmetrize the strain distribution and to maintain the pseudomorphic growth of the superlattices. Samples with different superlattice periodicities (i.e. d = dGe + dSi and different layer thickness ratios (i.e. dGe:dSi were prepared for comparison. Raman scattering spectroscopy and x-ray diffraction were used to characterize these samples. Initial results on thermal stability of these Ge m Si n SLS’s are also reported
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Chang, S.J., Arbet, V., Wang, K.L. et al. Studies of interdiffusion in GemSin strained layer superlattices. J. Electron. Mater. 19, 125–129 (1990). https://doi.org/10.1007/BF02651736
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DOI: https://doi.org/10.1007/BF02651736