Abstract
In this paper is reported an accurate and computationally efficient semiempirical model based on an extensive set of experimental data for arsenic implants into (100) single-crystal silicon. Experimental and model development details are given, and issues of the measurements are discussed. The newly developed model has explicit dependence on tilt angle, rotation angle, and dose, in addition to energy. Comparisons between the model predictions and experimental data are made in order to demonstrate the accuracy of this model.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
W.L. Smith, A. Rosenwaig, D. Willenborg, J. Opsal and M.W. Taylor,Solid State Technol. 29, 85 (1986).
R.G. Wilson, F.A. Dtevie and C.W. Magee,Secondary Ion Mass Spectrometry, (New York: John Wiley & Sons, 1989).
W. Vandervorst, H.E. Maes and R.F. De Keersmaecker,J. Appl. Phys. 56, 1425 (1984).
J.J. Lee, J.E. Fulghum, G.E. McGuire, M.A. Ray, C.M. Osburn and R.W. Linton,J. Vac. Sci. Technol. A 8, 2287 (1990).
K. Wittmaack and W. Wach,Nucl. Instrum. Meth. 191, 327 (1981).
K.M. Klein, C. Park, A.F. Tasch, B. Simonton and S. Novak,Electrochem. Soc. Spring Mtg.,Ext. Abstracts, 357 (1990).
P. Gupta, C. Park, K. Klein, S. Yang, S. Morris, V. Do,Proc. Mater. Res. Soc. 1991 Fall Mtg. (1991).
C. Ho, S. Hansen and P. Fahey,Stanford University Techni- cal Report (1984).
L.C. Chien, S. Corcoran, M. Taylor, A. Chatterjee, J. Garcia and R. Mathur,Proc. Second Intl. Workshop on the Measure- ment and Characterzation of Ultra-Shallow Doping Profiles in Semiconductors (1993).
A.F. Tasch, H. Shin, C. Park, J. Alvis and S. Novak,J. Electrochem. Soc. 136, 810 (1989).
S.J. Morris, V. Do, P. Gupta, S. Yang, C. Park, K.M. Klein and A.F. Tasch, Electrochem. Soc. Spring Mtg.,Ext. Abstracts, 92-1,450(1992).
C. Park, K.M. Klein and A.F. Tasch,Solid State Electronics 33, 645 (1990).
K. Levenberg,Quart., Appl., Math. 2, 164 (1944).
D. Marquardt,SIAM J. Appl. Math. 11, 431 (1963).
C. Park, Ph. D. dissertation, The University of Texas at Austin, Austin (1991).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Yang, SH., Morris, S.J., Lim, D.L. et al. An accurate and computationally efficient semi-empirical model for arsenic implants into single-crystal (100) silicon. J. Electron. Mater. 23, 801–808 (1994). https://doi.org/10.1007/BF02651376
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02651376