Abstract
The method of Bloch functions is used to obtain the radiation makeup of a semiconductor laser structure consisting of periodically alternating waveguide and antiguide regions, and the differntial gains for the different modes are determined. Pumping of antiguide regions with different structure parameters makes it possible to obtain the maximum gains of a Bloch mode made up of “outflowing” waveguide modes at the center of the brillouin lobe. The directivity pattern contains in this case sideband satellites in addition to the central lobe. When the structure is optimized, the intensity of the central lobe amounts to 70% of the total emission intensity.
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Literature Cited
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Additional information
Optoelectronics Laboratory, Lebedev Physics Institute, Academy of Sciences of the USSR. Translated from Preprint. No. 105 of the Lebedev Physics Institute, Academy of Sciences of the USSR, 1989.
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Eliseev, P.G., Nabiev, R.F. & Popov, Y.M. Analysis of laser-structure anisotropic semiconductors by the Bloch-function method. J Russ Laser Res 10, 449–458 (1989). https://doi.org/10.1007/BF01442219
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DOI: https://doi.org/10.1007/BF01442219