Conclusion
The above analysis of a microvibration sensor based on a semiconductor laser has shown that in the optimal operating regime one can expect a detection ability of ∼10−2 nm.
It is preferable to record an optical signal (change of radiation power) than an optoelectronic one (change diode voltage).
Several sensor variants were constructed: with an ILPN-202 commercial laser diode, with a laser cartridge, and with the LMF-1300 single-mode laser module. Since real sensors contain additional noise sources (pumping- and recording-system noise, fluctuations due to parasitic reflection, etc.), the sensitivity limit could not be reached. The detection ability ranges, depending on the scheme employed, from fraction of a nanometer to several nanometers, but is perfectly acceptable for many practical applications.
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Translation of Preprint No. 42 of the Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, 1991.
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Van Luc, V., Eliseev, P.G., Man'ko, M.A. et al. Microdisplacement and microvibration sensors based on semiconductor lasers. J Russ Laser Res 13, 13–24 (1992). https://doi.org/10.1007/BF01140306
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DOI: https://doi.org/10.1007/BF01140306