Abstract
The isoperiodic heterostructures AIGaAsSb/GaSb and InGaAsSb/GaSb and injection lasers based on them are investigated. It is shown that in the heterostructures of the first type it is possible to obtain very low threshold currents at room temperature at wavelengths 1.72–1.78 μm. Analysis of the experimental data and interpolation characteristics show that considerable optical confinement in the investigated heterostructures of the first type. Estimates show that the minimum threshold current in heterolasers for the spectral range 1.75–1.78 μm is approximately 1 kA/cm2. An investigation of the InGaAsSb/GaSb heterostructures shows that a case unusual for heterostructures of III-V compounds is realized in them when the material indicated has a smaller refractive index than the wideband layers. The “antiwaveguide” anomaly may be useful for the development of laser structures of new types.
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Translated from Trudy Ordena Lenina Fizicheskogo Instituta im. P. N. Lebedeva, Vol. 141, pp. 46–61, 1983.
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Dolginov, M.L., Drakin, A.E., Druzhinina, L.V. et al. Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures. J Russ Laser Res 5, 349–362 (1984). https://doi.org/10.1007/BF01120625
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DOI: https://doi.org/10.1007/BF01120625