Abstract
A survey is presented of the trends and results of injection-laser research at the P. N. Lebedev Institute of the Academy of Sciences of the USSR (FIAN) over 20 years, starting with the theoretical prediction in 1961 by N. G. Basov and others of the FIAN staff, of the feasibility of injection lasers. The most significant results were reached in investigations of the emission dynamics, new materials and heterostructures degradation and nonlinear phenomena, and in the development and investigation of single-mode and single-frequency injection lasers. New fields of practical applications are briefly listed.
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A. P. Bogatov, P. G. Eliseev, V. I. Panteleev, and E. G. Shevchenko, “Comparison of instantaneous and averaged emission spectrum of an injection laser in the spontaneouspulsation regime,” Kvantovaya Elektron. (Moscow), No. 5, 93–95 (1971).
R. G. Allakhverdyan, A. N. Oraevskii, and A. F. Suchkov, “Effect of waveguide properties of p-n junction on the lasing regime of gallium-arsenide laser diodes,” Fiz. Tekh. Poluprovodn.,4, No. 2, 341 (1970).
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G. A. Alaverdyan, V. I. Bazhenov, A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhal'skii, and K. A. Khairetdinov, “Steplike shape of emission pulses of injection lasers based on the binary heterostructure GaAs−AlGaAs with stripe-shaped contact,” Kvantovaya. Elektron. (Moscow),7, No. 1, 123–127 (1980).
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A. P. Bogatov, P. G. Eliseev, and V. V. Mamutin, “Influence of excess carriers on the dielectric constant of GaAs at the radiative-transition frequency in injection layers,” Kvantovaya Elektron. (Moscow)3, No. 7, 1609–1610 (1976).
V. F. Litvinov, V. I. Molochev, V. N. Morozov, V. V. Nikitin, and A. S. Semenov, “Dynamic instability of semiconductor laser at low temperatures,” Pis'ma Zh. Eksp. Teor. Fiz.,19, No. 12, 747–750 (1974).
A. G. Aleksanyan, I. A. Poluektov, and Yu. M. Popov, “Optical gain in strongly doped semiconductors,” Kvantovaya Elektron. (Moscow), No. 2(8), 77 (1972).
A. G. Aleksanyan, I. A. Poluektov, and Yu. M. Popov, “Calculation of the Fermi quasilevels and of the Characteristic of spontaneous emission in strongly doped semiconductors,” Kvantovaya Elektron. (Moscow), No. 5(17), 117 (1973).
A. P. Bogatov, P. G. Eliseev, L. P. Ivanov, A. S. Logginov, and K. Ya. Senatorov, “Kinetics of the emission spectrum of an injection laser and shutoff of single-mode lasing,” Kvantovaya Elektron. (Moscow), No. 5 (17), 14–20 (1973).
Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, “Investigation of the influence of heterostructure parameters on the threshold current of lasers and obtaining a cw lasing regime at room temperature,” Fiz. Tekh. Poluprovodn.,4, 1826–1830 (1970).
I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, “Junction lasers which operate continuously at room temperature,” Appl. Phys. Lett.,17, No. 3, 109–112 (1970).
I. K. Bronshtein, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, I. V. Krasavin, and L. D. Libov, “Cw injection laser at 300°K,” Kratk. Soobshch. GIREDMET, Ser. 5, No. 21 (1970).
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, I. V. Krasavin, and L. D. Libov, “Cw lasing in semiconductor lasers at room temperature,” Kratk. Soobshch. Fiz. FIAN, No. 2, 57–63 (1971).
L. M. Dolginov, P. G. Eliseev, L. D. Libov, I. Z. Pinsker, and E. G. Shevchenko, “Effect of temperature on the lasing threshold in injection lasers based on GaAs−AlGaAs heterostructures,” Kratk. Soobshch. Fiz. FIAN, No. 9, 9–14 (1970).
L. M. Dolginov, P. G. Eliseev, L. D. Libov, I. Z. Pinsker, E. L. Portnoi, G. G. Kharisov, and E. G. Shevchenko, “Diffraction divergence of radiation and effect of optical confinement in heterostructure injection lasers,” Krat. Soobshch. Fiz. FIAN, No. 12, 63–66 (1970).
P. G. Eliseev, “Waveguide structure of semiconductor lasers with p-n junctions and heterojunctions,” FIAN Preprint, No. 33, Moscow (1970).
P. G. Eliseev, “Optimal thickness of active layer in a heterolaser,” Kvantovaya Elektron. (Moscow), No. 3, 120–121 (1971).
P. G. Eliseev, “Filamentary heterostructure for an injection laser,” Krat. Soobshch. Fiz. FIAN, No. 3, 9–13 (1974).
P. G. Eliseev, “Heterojunction lasers,” Kvantovaya Elektron. (Moscow), No. 6 (12), 3–30 (1972).
P. G. Eliseev, “Degradation of injection lasers,” J. Luminescence,7, 338–356 (1973).
P. G. Eliseev, I. N. Zavestovskaya, and I. A. Poluektov, “Mechanism of atom displacement in laser crystals under the influence of nonradiative recombination,” Kvantovaya Elektron. (Moscow),5, No. 1, 145–148 (1978).
P. G. Eliseev and A. V. Khaidarov, “Role of mechanical stresses in the gradual degradation of light-emitting diodes and injection lasers,” Kvantovaya Elektron. (Moscow),2, No. 1, 127–129 (1975).
P. G. Eliseev, I. Z. Pinsker, and Yu. F. Fedorov, “Degradation of injection lasers in the course of operation and under the influence of fast particles,” Kvantovaya Elektron. (Moscow),1, 1277–1279 (1974).
P. G. Eliseev, D. N. Morozov, and Yu. F. Fedorov, “Statistical distribution of injection-laser breakdowns,” Kvantovaya Elektron. (Moscow), No. 3 (9), 107 (1972).
P. G. Eliseev, “Kinetics of aging of electroluminescent diodes and of injection lasers,” Fiz. Tekh. Poluprovodn.,6, No. 9, 1655–1661 (1972).
P. G. Eliseev, I. Z. Pinsker, and Yu. F. Fedorov, “Empirical estimate of the service life of injection lasers on the basis of short-time tests,” Kvantovaya Elektron. (Moscow), No. 3 (9), 105–106 (1972).
S. A. Alaverdyan, P. G. Eliseev, N. D. Zhukov, and A. I. Popov, “Degradation of the mirror faces of cw heterolasers after operating for 10,000 h,” Kratk. Soobshch. Fiz. FIAN, No. 6, 3–6 (1979).
P. G. Eliseev, V. P. Martovitskii, and O. N. Talenskii, “X-ray topographic investigation of heterostructures,” Tr. FIAN, 141 (1983).
L. M. Dolginov, P. G. Eliseev, and M. G. Mil'vidskii, “Multicomponent semiconducting solid solutions and their use in lasers,” Kvantovaya Elektron. (Moscow),3, No. 7, 1381–1393 (1976).
A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, and E. G. Shevchenko, “Heterolasers based on the solid solutions GaxIn1−xAsyP1−y and AlxGa1−xSbyAs1−y,” Kvantovaya Elektron. (Moscow),1, No. 10, 2294–2295 (1974).
V. V. Bezotosnyi, L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, E. G. Shevchenko, and G. V. Shepekina, “GaInPAs/InP heterolasers based on burried mesa-stripe structure and operating in the cw regime at room temperature at a wavelength 1.24–1.25 μm,” Kvantovaya Elektron. (Moscow), 7 No. 9, 1990–1992 (1980).
V. V. Bezotosnyi, A. P. Bogatov, L. M. Dolginov, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, and E. G. Shevchenko, “Heterolasers based on GaInPAs/InP,” Tr. FIAN,141, 18 (1983) (this issue).
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, M. G. Mil'vidskii, and B. N. Sverdlov, “New uncooled injection heterolaser in the 1.5–1.8-μm band,” Kvantovaya Elektron. (Moscow),3, No. 2, 465–466 (1976).
L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. N. Lapshin, M. G. Mil'vidskii, and B. N. Sverdlov, “Injection laser based on the quaternary solid solution InGaAsSb,” Kvantovaya Elektron. (Moscow),5, No. 3, 703–704 (1978).
O. I. Davarashvili, L. M. Dolginov, P. G. Eliseev, I. I. Zasavitskii, and A. P. Shotov, “Multicomponent solid solutions of IV–VI compounds,” Kvantovaya Elektron. (Moscow),4, No. 4, 904–907 (1977).
L. N. Kurbatov, A. D. Brutov, S. M. Karavaev, Yu. I. Gorina, G. A. Kalyuzhnaya, and P. M. Starik, “PbSnTe−PbTe 10-μm heterolaser,” Kvantovaya Elektron. (Moscow),2, No. 9, 2084 (1975).
A. D. Brutov, S. M. Karavaev, G. A. Kalyuzhnaya, Yu. I. Gorina, A. L. Kurbatov, K. V. Kiseleva, and P. M. Starik, “Laser diodes for the 5–15-μm band,” Kvantovaya Elektron. (Moscow),3, No. 10, 2238–2242 (1976).
A. D. Brutov, N. A. Penin, S. N. Maksimovskii, S. M. Karavaev, I. P. Revokatova, A. L. Kurbatov, I. S. Aver'yanov, B. P. Pyregov, and V. P. Myzina, “Tunable Pb1−ySnySe−PbSe heterolaser,” Kvantovaya Elektron. (Moscow),3, No. 11, 2513 (1976).
N. G. Basov, A. G. Molchanov, A. S. Nasibov, A. Z. Obidin, A. N. Pechenov, and Yu. M. Popov, “Solid-state streamer lasers,” Zh. Eksp. Teor. Fiz.,70, No. 5, 1751–1761 (1976).
N. P. Ivanov, A. I. Krasil'nikov, V. F. Litvinov, V. I. Molochev, V. V. Nikitin, and A. S. Semenov, “Single-channel injection laser with emission range of several microns,” Kvantovaya Elektron. (Moscow), No. 6 (18), 117 (1973).
N. G. Basov, V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, and O. N. Talenskii, “Single-frequency injection semiconductor laser based on GaAs,” Kvantovaya Elektron. (Moscow),4, No. 8, 1815 (1977).
P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, and Vu Van Lyk, “Investigation of planar stripe-geometry heterolasers based on AlGaAs−GaAs,” Tr. FIAN,141, 89 (1983) (this issue).
D. Akkerman, P. G. Eliseev, A. Kaiper, M. A. Man'ko, and Z. Raab, “Methods of selecting the oscillation modes in injection semiconductor lasers,” Kvantovaya Elektron. (Moscow), No. 1, 85–90, (1971).
P. G. Eliseev, Yu. M. Popov, and N. N. Shuikin, “Effect of frequency filter on the emission spectrum of semiconductor lasers,” Zh. Eksp. Teor. Fiz.,56, No. 4, 1412–1418 (1969).
V. Yu. Bazhenov, A. P. Bogatov, Yu. V. Gurov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, M. P. Rakhval'skii, M. S. Soskin, V. B. Taranenko, and K. A. Khairetdinov, “Optical heterodyning of injection-laser radiation with an external dispersion cavity,” Kvantovaya Elektron. (Moscow),7, No. 11, 2510–2512 (1980).
A. P. Bogatov, P. G. Eliseev, M. A. Man'ko, and Chan Min' Tkhai, “Influence of compound cavity on the emission coherence of injection semiconductor lasers,” Krat. Soobshch. Fiz. FIAN, No. 9, 60–65 (1971).
A. P. Bogatov, P. G. Eliseev, and B. N. Sverdlov, “Anomalous interaction of spectral oscillation modes in a semiconductor laser,” Kvantovaya Elektron. (Moscow),1, No. 10, 2286–2288 (1974).
H.-J. Bachert, A. P. Bogatov, and P. G. Eliseev, “Mode deformation in an injection laser by self-focusing, and its connection with the nonlinearity of the output characteristic,” Kvantovaya Elektron. (Moscow),5, No. 3, 603–608 (1978).
A. P. Bogatov, P. G. Eliseev, O. G. Okhotnikov, G. T. Pak, S. A. Pashko, M. P. Rakhal'skii and K. A. Khairetdinov, “Investigation of cw injection laser with external dispersive cavity,” Tr. FIAN,141, 62 (1983) (this issue).
V. A. Ageikin, I. I. Zasavitskii, V. G. Koloshnikov, A. I. Likhter, E. G. Pel', and A. P. Shotov, “Interferometric measurements of the emission linewidth of a pulsed injection laser based on PbSe,” Opt. Spektrosk.,36, No. 4, 808–811 (1974).
I. I. Zasavitskii, B. N. Matsonashvili, and A. P. Shotov, “Effect of magnetic field on spontaneous and coherent emission of a p-n junction in PbSe,” Fiz. Tekh. Poluprovodn.,6, No. 7, 1288–1291 (1972).
I. I. Zasavitskii, E. G. Chizhevskii, and A. P. Shotov, “Pressure-tunable cw injection laser based on PbSe,” Kvantovaya Elektron. (Moscow),5, No. 3, 692–694 (1978).
I. I. Zasavitskii, B. N. Matsonashvili, V. I. Pogodin, and A. P. Shotov, “Effect of hydrostatic pressure on the emission spectra of PbSnSe lasers,” Fiz. Tekh. Poluprovodn.,8, No. 4, 732–736 (1974).
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Translated from Trudy Ordena Lenina Fizicheskogo Institute im. P. N. Lebedeva, Vol. 141, pp. 3–17, 1983.
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Eliseev, P.G. Investigation of injection lasers at the physics institute of the academy of sciences (FIAN). J Russ Laser Res 5, 311–324 (1984). https://doi.org/10.1007/BF01120623
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DOI: https://doi.org/10.1007/BF01120623