Abstract
Single- and double-layer xerographic photoreceptors were fabricated by vacuum deposition of a-Se1-xTex alloy films on aluminium substrates. Double-layer photoreceptors comprised of a thin (a few micrometres) a-Se1-xTex alloy serving as a photogeneration layer (PGL) on a thick (50 to 60 μm) a-Se layer acting as a charge transport layer (TL). Xerographic dark discharge experiments on a-Se films indicated that the decay of the surface potential over the time scale of observation (∼ 500 sec) is essentially due to bulk thermal generation of holes, and their consequent sweep-out and depletion. Hole emission occurs from discrete midgap localized states and it is field-assisted. When a-Se is alloyed with tellurium the dark discharge becomes more rapid due to an increase in both the volume density and energy spread of the midgap hole emission centres with tellurium concentration. In double-layer photoreceptors, with a tellurium content over 3 wt%, although the PGL was only a few micrometres in thickness, the dark discharge was mainly due to the tellurium-rich PGL. The repetition of the xerographic cycle over many cycles leads to the saturation of the surface residual voltage which was used to determine the concentration Nt of deep hole traps. For a-Se, Nt (1.9 x 1013cm−3) was found to be comparable to the concentration of midgap- hole emission centres, which suggested that amphoteric neutral centres (possibly intimate valence alternation pairs) are involved in hole capture and emission. The saturated residual voltage Vr∞ in a-Se1-xTex alloy films increased with the tellurium content up to 6 to 8 wt% Te due to tellurium-introduced deep traps. In double layers, the saturated residual voltage was more than that expected from the properties of monolayers, due probably to the presence of deep hole traps at the PGL-TL interface. Xerographic time-of-flight (XTOF) experiments confirmed the previous results from the electroded TOF experiments that tellurium addition increases the density of shallow traps. Combining the TOF data with the saturated residual voltage measurements gives a hole capture coefficient Ct of ∼ 1.2 x 10−8 cm3 sec−1 for pure a-Se. Chlorine doping of a-Se resulted in a very rapid dark discharge and a fall in the saturated residual voltage.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
B. E. Springett, in Proceedings of the 3rd International Symposium on Industrial Uses of Selenium and Tellurium Stockholm, Sweden, 1984 (Selenium-Tellurium Development Association, Darien, USA) pp. 285–295.
W. J. Murphy, in Proceedings of the 3rd International Symposium on Industrial Uses of Selenium and Tellurium Stockholm, Sweden, 1984 (Selenium-Tellurium Development Association, Darien, USA) pp. 279–285.
I. Cheung, G. M. T. Foley, P. Fournia andB. E. Springett,Phtogr. Sci. Engng 26 (1982) 245.
K. Tateishi andY. Hoshino,IEEE Trans. Elec. Dev. ED-31 (1984) 793.
K. Kiyota, A. Teshima andM. Tanaka,Photogr. Sci. Engng 24 (1980) 289.
A. R. Melnyk, J. S. Berkes andL. B. Schein, in Proceedings of the First International Congress on Advances in Non-Impact Printing Technologies for Computer and Office Applications, Venice, 1981, edited by J. Gaynor (Van Nostrand Reinhold, New York, 1982) pp. 503–509.
Y. Taniguchi, H. Yamamoto, S. Horigome, S. Saito andE. Maruyama,J. Appl. Phys. 52 (1981) 7261.
J. H. Neyhart,Photogr. Sci. Engng 10 (1966) 126.
H. Adachi andK. C. Kao,J. Appl. Phys. 51 (1980) 6326.
A. L. Dawar, J. C. Joshi andL. Narain,Thin Solid Films 76 (1981) 113.
S. H. Hagen andP. J. A. Derks,J. Non-Cryst. Solids 65 (1984) 241.
J. C. Schotmiller, M. Tabak, G. Lucousky andA. Ward,ibid,4 (1970) 80.
T. Takahashi,ibid,34 (1979) 312.
M. Abkowitz andJ. M. Markowics,Solid State Commun. 44 (1982) 1431.
S. O. Kasap andC. Juhasz,J. Non-Crysi. Solids 72 (1985) 23.
C. Juhasz, M. Vaezi-Nejad andS. O. Kasap,J. Imaging Sci. 29 (1985) 144.
S. O. Kasap andC. Juhasz,J. Mater. Sci. 21 (1986) 1329.
M. Abkowitz andR. C. Enck,Phys. Rev. B25 (1982) 2567.
S. B. Berger andR. C. Enck, in Proceedings of the International Symposium on Industrial Uses of Selenium and Tellurium, Toronto, 1980 (Selenium-Tellurium Development Association, Darien, USA) p. 197.
S. B. Berger, R. C. Enck, M. E. Scharfe andB. E. Springett, in “Physics of Selenium and Tellurium”, edited by E. Gerlach and P. Grosse (Springer, New York, 1979) p. 256.
J. S. Berkes, in Proceedings of Second International Conference on Electrophotography, Washington, DC, 1974, edited by D. R. White (Society of Photographic Scientists and Engineers, Springfield, Virginia, USA, 1974) p. 137.
J. C. Schottmiller,J. Vac. Sci. Technol. 12 (1975) 807.
M. D. Tabak andW. J. Hillegas,ibid 9 (1972) 387.
G. C. Das, M. B. Bever, D. R. Uhlmann andS. C. Moss,J. Non-Cryst. Solids 7 (1972) 251.
R. B. Stephens,ibid. 20 (1976) 75.
M. Abkowitz,Polym. Eng. Sci. 24 (1984) 1149.
Idem., J. Non-Cryst. Solids 77/78 (1984) 1191.
L. Pauling, “The Nature of the Chemical Bond”, 3rd Edn. (Cornell University Press, Ithaca, 1968) pp. 60 and 64.
Y. Okamoto andK. Nakamura,Electrophotography (Japan) 17 (1979) 26.
S. M. Vaezi-Najad andC. Juhasz,Thin Solid Films in press.
M. Abkowitz andR. C. ENCK,Phys. Rev. B27 (1983) 7402.
A. W. Ing andJ. H. Neyhart,J. Appl. Phys. 43 (1972) 2670.
S. O. Kasap andC. Juhasz,J. Phys. D 18 (1985) 703.
Idem, Photogr. Sci. Engng 26 (1982) 239.
M. M. Shahin,J. Chem. Phys. 45 (1967) 2600.
D. W. Vance,J. Appl. Phys. 42 (1971) 5430.
P. K. Watson, in Proceedings of 5th Conference on Electrostatic Phenomena, Oxford, England, 1979, edited by J. Cowell (Conference Series No. 48) (Institute of Physics, Bristol, England, 1979) p.1.
H. Kless,RCA Rev. 30 (1975) 667.
M. Scharfe, “Electrophotography Principles and Optimisation” (Research Studies Press, Letchworth, England, 1984) Ch. 4.
A. Melnyk,J. Non-Cryst. Solids 35/36 (1980) 837.
M. Abkowitz, F. Jansen andA. R. Melnyk,Phil. Mag. B51 (1985) 405.
L. B. Schein,Phys. Rev. 10 (1974) 3451.
M. Abkowitz, G. M. T. Foley, J. M. Markowics andA. C. Palumbo,Appl. Phys. Lett. 46 (1985) 393.
M. Abkowitz, G. M. T. Foley, J. M. Markowics andA. C. Palumbo, in Proceedings of Conference on Optical Effects in Amorphous Semiconductors, Snowbird, Utah, 1984, edited by P. C. Taylor and S. G. Bishop (AIP Conference Proceedings No. 120) (American Institute of Physics, New York, 1984) p. 117.
C. Juhasz, S. O. Kasap andM. Baxendale, to be published.
R. M. Schaffert, ”Electrophotography” (Focal Press, London, 1975) pp. 237–247.
M. Abkowitz,J. Chem. Phys. 46 (1967) 4537.
S. C. Agarwal,Phys. Rev. B7 (1973) 685.
M. Kastner, D. Adler andH. Fritzsche,Phys. Rev. Lett. 37 (1976) 1504.
P. Adler andE. Yoffa,Can. J. Chem. 55 (1977) 1920.
M. Kastner,J. Non-Cryst. Solids 31 (1978) 223.
M. Tabak andP. J. Warter,Phys. Rev. 173 (1968) 899.
W. Herms, H. Karsten andU. Zerrenthin,Phys. Status Solidi (a) 23 (1974) 479.
K. K. Kanazawa andI. P. Batra,J. Appl. Phys. 43 (1972) 1845.
R. M. Blakney andH. P. Grunwald,Phys. Rev. 159 (1967) 658.
I. P. Batra andH. Seki,J. Appl. Phys. 41 (1970) 3409.
R. A. Street,Phil. Mag. 49 (1984) L15.
Idem. Appl. Phys. Lett. 41 (1982) 1060.
R. A. Street, J. Zesch andM. J. Thompson,ibid. 43 (1983) 672.
C. Juhasz andS. O. Kasap,J. Mater. Sci. Left. in press.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Juhasz, C., Vaezi-Nejad, M. & Kasap, S.O. Xerographic properties of single- and double-layer photoreceptors based on amorphous selenium-tellurium alloys. J Mater Sci 22, 2569–2582 (1987). https://doi.org/10.1007/BF01082147
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF01082147