Abstract
The electrical and photoluminescent (PL) properties of Al x Ga{1−x}As layers grown by MBE have been investigated. Some experimental factors, e.g. vacuum conditions, substrate growth temperature and As/group-III flux ratio, have been considered. Undoped AlGaAs layers exhibit slight p-type characteristics due to C accepters and its concentration is lower than 1015cm−3. Both n- and p-type AlGaAs layers achieve semi-insulated high resistance when the substrate temperature is lower than 580° C. The experimental results are comparable to other reports. In summary, the excellent vacuum environment, higher substrate temperature (T s>580° C) and lower As/group-III flux ratio are the necessary conditions for growing high quality Al x Ga1−x As layers.
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Liu, W.C. Investigation of electrical and photoluminescent properties of MBE-grown Al x Ga1−x As layers. J Mater Sci 25, 1765–1772 (1990). https://doi.org/10.1007/BF01045382
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DOI: https://doi.org/10.1007/BF01045382