Abstract
Radioactive119mSn has been implanted with an isotope separator in single crystals of germanium, silicon, and diamond. Implantations of low doses (∼1013 atoms/cm2) at room temperature were performed as well as of higher doses at temperatures of about 400°C. The Mössbauer spectra of these sources show mainly one line. This line originates from119mSn on substitutional lattice sites as determined from channeling experiments with 2 MeV He+ ions on the same samples. The observed systematics of the isomer shifts for119Sn is explained on the basis of the average electronic configuration nsZ snpZ p characterizing chemical bonding in the host crystals. The Debye-Waller factors measured at room temperature are compared to values calculated in a high temperature approximation which accounts for impurity-host mass difference.
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Weyer, G., Nylandsted-Larsen, A., Deutch, B.I. et al. Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experiments. Hyperfine Interact 1, 93–112 (1975). https://doi.org/10.1007/BF01022445
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DOI: https://doi.org/10.1007/BF01022445