Abstract
Morphology and elemental and phase composition of Pb-GaAs contacts prepared by electroprecipitation of the metal and annealed in a hydrogen atmosphere are studied. It is shown that the interaction of the lead with the gallium arsenide occurs with participation of a liquid phase which appears at 100–300°C due to dissociation of the semiconductor and gallium diffusion into the metallic coating. The absence of complex ions of the PbnGam(Asm)+ type in the secondary ion mass spectra of the contacts analyzed indicates that chemical interaction of the lead with gallium and arsenic does not occur.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 12–15, September, 1987.
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Yanovskii, V.P., Maksimova, N.K., Arbuzova, G.K. et al. Physicochemical interactions in thin film Pb-GaAs structures upon thermal annealing. Soviet Physics Journal 30, 730–734 (1987). https://doi.org/10.1007/BF00897468
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DOI: https://doi.org/10.1007/BF00897468