Abstract
Channeling effect techniques with a 2.0 MeV He+ Rutherford backscattering and transmission electron microscopy were used to characterize the crystallized layers after Q-switched ruby laser irradiation of 4000 Å thick amorphous layer on 〈100〉 and 〈111〉 underlined crystal substrates. At a laser energy density of 2.5 J/cm2 the crystal layer on the 〈111〉 specimen contains a large density of stacking-faults, that on 〈100〉 specimen contains a very small amount of screw dislocation lines. High quality single-crystal layers have been obtained after irradiation at 3.5 J/cm2. From a comparison with the growth rate and defect structure observed in thermally annealed implanted-amorphous layers, we propose that crystal growth by 50 ns pulse laser annealing occurs by melting the amorphous layer.
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Foti, G., Rimini, E., Tseng, W.S. et al. Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples. Appl. Phys. 15, 365–369 (1978). https://doi.org/10.1007/BF00886154
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DOI: https://doi.org/10.1007/BF00886154