Abstract
It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and AlxGa1−xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.
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Abstreiter, G., Bauser, E., Fischer, A. et al. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs. Appl. Phys. 16, 345–352 (1978). https://doi.org/10.1007/BF00885858
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DOI: https://doi.org/10.1007/BF00885858