Abstract
A method is described by which it is possible to obtain thin diffusion layers with various impurity distributions within the layer. Calculations and graphs are given which may be used to determine the junction thickness and impurity concentration at any point of the diffusion layer when the diffusion conditions are known.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
B. I. Boltaks, Diffusion in Semiconductors [in Russian], Fizmatgiz, 1961.
R. Miller and F. Smits, Phys. Rev.,107, 1, 65, 1957.
F. Smits and R. Miller, Phys. Rev.,104, 1242, 1956.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bolkhovityanov, Y.B. Impurity diffusion into semiconductors. Soviet Physics Journal 8, 32–35 (1965). https://doi.org/10.1007/BF00868541
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF00868541