Abstract
Population densities of excited Cu II-levels between 16 and 25 eV in Cu−He hollow cathode discharges were determined by emission spectroscopy. Population inversion was detected for several 6s-4p transitions. Investigation of the enhancement of Cu II vuv lines in He compared to Ne discharges showed that the excitation of the 6s levels by charge transfer is up to 100 times higher in He than in pure Ne discharges. Using the population densities and known transition probabilities, a single pass gain of 55% m−1 at 780.8 nm and 1.2% m−1 at 154.17 nm at a current density of 0.4 A cm−2 was calculated.
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This paper is dedicated to Prof. Dr. H. Gobrecht on the occasion of his 75th birthday
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Eichler, H.J., Koch, H., Seedorf, R. et al. Population densities and optical gain of VUV transitions of Cu II in Cu−He hollow cathode discharges. Appl. Phys. B 36, 5–10 (1985). https://doi.org/10.1007/BF00698029
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DOI: https://doi.org/10.1007/BF00698029