Abstract
The growth kinetics and optical properties of thin layers of MnSi1.73 have been studied. MnSi1.73 was formed by thermal reaction (485–570°C) of Mn-Si thin-film couples, through a nucleation-controlled process. MnSi1.73 is semiconducting and the band-gap energy was optically determined using a spectrophotometer and a sample with a single MnSi1.73 layer on a silicon substrate. The value was between 0.78 and 0.83 eV.
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Zhang, L., Ivey, D.G. Reaction kinetics and optical properties of semiconducting MnSi1.73 grown on 〈001〉 oriented silicon. J Mater Sci: Mater Electron 2, 116–123 (1991). https://doi.org/10.1007/BF00694763
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DOI: https://doi.org/10.1007/BF00694763