Abstract
The phase-conjugate reflectivity obtainable by degenerate four-wave mixing in silicon at a 1.06 μm is calculated including free-carrier absorption. A maximum reflectivity of more than 100% is possible. The dependence of the reflectivity on the signal and pump energy densities up to 70 mJ/cm2 is measured and found to agree with theory. The wave-front-correction property of DFWM is demonstrated with a lens in the signal beam.
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Eichler, H.J., Chen, J. & Richter, K. Four-wave mixing reflectivity of silicon at 1.06 μm: Influence of free-carrier absorption. Appl. Phys. B 42, 215–219 (1987). https://doi.org/10.1007/BF00693938
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DOI: https://doi.org/10.1007/BF00693938