Abstract
It is shown that short photoelectrochemical etching of two kinds of ZnS crystals leads to a reduction in the surface recombination velocity as evidenced by their increased photocurrent. The unique surface morphology (>109 pits cm−2) revealed after photoetching supports the hypothesis that the charge flow within the space charge layer is highly nonuniform.
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Incumbent of Helen & Milton A. Kimmelman Career Development Chair in perpetuity established by Helen and Milton A. Kimmelman, New York, NY
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Tenne, R., Shatkay, M. Photoelectrochemical etching of ZnS: Further evidence for non-uniform flow of charge carriers in Schottky barriers. Appl. Phys. B 35, 243–247 (1984). https://doi.org/10.1007/BF00693934
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DOI: https://doi.org/10.1007/BF00693934