Abstract
The extent of the silicon carbide single-phase stability field has been investigated. Samples were equilibrated at 2400 ° C by coarsening of fine-grain silicon carbide powder. The lattice parameter, density, and the silicon-to-carbon ratio were measured on silicon- and carbon-saturated samples. These two compositions were not distinguishable at a level of better than one part in one thousand by their molecular weights per mole of crystal sites; no native point defects measurably respond to the difference in silicon activity. The accuracy of the lattice parameter and density measurements require that the free energies of defect pair formation be larger than about 3eV. This applies to antisite pairs, Frenkel pairsand Schottky pairs. It is concluded that silicon carbide is largely stoichiometric. The crystal chemistry must be dominated by electrons, holes and impurities.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
P. T. B. Shaffer,Mater. Res. Bull. S4 (1969).
V. A. Il'in et al., Inorg. Mater. 16 (1980) 699.
W. F. Knippenberg,Philips Res. Repts. 18 (1963) 161.
J. Hojo et al., J. Amer. Ceram. Soc. Commun,66 (1983) c114.
M. Nagatomo, H. Ishiwara andS. Furukawa,Jpn J. Appl. Phys. 18 (1979) 765.
N. D. Sorokin et al., Sov. Phys. Cryst. 28 (1983) 539.
National Bureau of Standards, Reference Materials SRM 112 (1912) and SRM 112b (1985).
Y. M. Tairov andV. F. Tsvetkov, in “Crystal Growth and Characterization of Polytype Structures”, edited by P. Krishna (Pergamon, Oxford, 1983) pp. 111–161.
R. F. Adamsky andK. M. Merz,Z. Krist. 111 (1959) 350.
H. Ott,Naturwissenschaften 13 (1925) 644.
Y. Tajima andW. D. Kingery,J. Amer. Ceram. Soc. Commun. 65 (1982) c27.
R. Gol'dshmidt et al., Sov. Phys. Cryst. 27 (1982) 371.
D. Lundqvist,Acta Chem. Scand. 2 (1948) 177.
G. Borrmann andH. Seyfarth,Z. Krist. 86 (1933) 472.
A. Taylor andD. S. Laidler,Br. J. Appl. Phys. 1 (1950) 174.
A. Taylor andR. M. Jones, in “Silicon Carbide”, edited by J. R. O'Connor and J. Smiltens (Pergamon, New York, 1960) pp. 147–154.
T. Kawamura,J. Mineralogy 4 (1965) 333.
P. T. B. Shaffer,Mater. Res. Bull. S4 (1969) 213.
G. A. Slack andR. I. Scace,J. Chem. Phys. 42 (1965) 805.
J. A. Conwicke, PhD thesis, Massachusetts Institute of Technology (1969).
H. Suzuki andT. Hase,J. Amer. Ceram. Soc. 63 (1980) 349.
R. N. Ghostagore, ScD thesis, Massachusetts Insitute of Technology (1965).
R. N. Ghoshtagore andR. L. Coble,Phys. Rev. 143 (1966) 623.
M. H. Hon andR. F. Davis,J. Mater. Sci. 14 (1979) 2411.
M. H. Hon, R. F. Davis andD. E. Newbury,ibid. 15 (1980) 2073.
J. D. Hong andR. F. Davis,J. Amer. Ceram. Soc. 63 (1980) 546.
J. D. Hong, R. F. Davis andD. E. Newbury,J. Mater. Sci. 16 (1981) 2485.
D. P. Birnie III,Amer. Ceram. Soc. Commun. 69 (1986) c33.
J. A. Van Vechten,J. Electrochem. Soc. 122 (1975) 423.
D. P. Birnie III andW. D. Kingery,J. Mater. Sci. 20 (1985) 2193.
B. D. Cullity, “Elements of X-Ray Diffraction”, 2nd Edn (Addison-Wesley, Reading, Massachusetts, 1978) p. 354.
G. Oster andM. Yamamoto,Chem. Rev. 63 (1963) 257.
Joint Committee on Powder Diffraction Standards, Card No. 4-864, American Society for Testing and Materials Publication (Philadelphia, Pa., 1966).
Joint Army, Navy, Air Force (JANAF) Thermochemical Tables, edited by D. R. Stull and H. Prophet (National Bureau of Standards, Gaithersburg, 1971).
T. R. Sweatman andJ. V. P. Long,J. Petrology 10 (1969) 332.
W. J. Choyke andL. Patrick, in Proceedings of 3rd International Conference on Silicon Carbide, Miami Beach, Florida (1973), (U. South Carolina Press, Columbia, 1973) pp. 261–283.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Birnie, D.P., Kingery, W.D. The limit of non-stoichiometry in silicon carbide. J Mater Sci 25, 2827–2834 (1990). https://doi.org/10.1007/BF00584888
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00584888