Abstract
This paper is concerned with anomalous diffusion effects in silicon, and particularly with the emitter-dip (or push-out) effect, which occurs in diffused transistors. Several possible mechanisms may be involved in anomalous diffusion and each is discussed, together with relevant experimental and theoretical work. Literature directly on the emitter-dip effect is next reviewed, and finally the author suggests fields of research which may clarify the mechanism or mechanisms involved.
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Willoughby, A.F.W. Anomalous diffusion effects in silicon (a review). J Mater Sci 3, 89–98 (1968). https://doi.org/10.1007/BF00550894
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DOI: https://doi.org/10.1007/BF00550894