Abstract
A dielectric laser cavity of 1 cm length has been optimized for high gain (7 cm−1) operation which is achieved in XeF doped Ar crystals. Mode structures on the C-A spectral distribution around 540 nm and far field transverse mode patterns are reported. Photchemical gain burning is observed in the spectral mode structures. The dependence of the laser threshold on pump energy, pumped length and on cavity losses is studied. XeF densities of 7×1017 cm−3 and distributed losses of 1.2 cm−1 are derived. The measured quantum efficiency of 14% and the saturation behaviour are consistently described. Losses by transient aborption and two photon absorption are discussed.
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Zerza, G., Sliwinski, G. & Schwentner, N. Threshold and saturation properties of a solid-state XeF (C-A) excimer laser. Appl. Phys. B 55, 331–337 (1992). https://doi.org/10.1007/BF00333076
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DOI: https://doi.org/10.1007/BF00333076