Abstract
Clean ablation of poly(tetrafluoroethylene) (PTFE) at etch rates in excess of 7µm/pulse has been achieved with an excimer laser using 308nm radiation and a 25 ns pulse width. This was accomplished by doping the ultraviolet-transparent PTFE polymer with polyimide. Ablation rates were investigated as a function of fluence in the range from 1 to 12J/cm2 and dopant levels up to 15% (wt/wt). Results show that at a given fluence there exists an optimum absorption coefficient ⇌max, for which maximum ablation rates are achieved. The value of ⇌max was found to decrease with increasing fluence. The relationship between ⇌max and fluence was determined from existing ablation rate models and found to compare favorably with empirical results.
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