Abstract
In this research, the 4H-SiC contact resistance was analyzed according to the Co to Si composition ratio. The Co to Si composition ratio was split into 1:2, 1:2.5, and 1:3, and two-step annealing was performed to form Co silicide. The specific contact resistivity and the thermal stability characteristics were measured, and the results were analyzed by X-ray diffraction (XRD). As a result, when the composition ratio of Co to Si was 1:2.5, the specific contact resistivity was the smallest, and the variation in temperature. is also the smallest. The reason for this was confirmed based on the results of by the XRD analysis that CoSi2, which is the most thermodynamically stable phase of Co silicide, was formed well when the Co to Si composition ratio was 1:2.5.
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Acknowledgments
This research was supported by KIAT (Korea Institute for the Advancement of Technology), supervised by MOTIE (Ministry of Trade, Industry and Energy) (S2757304) and MSIT (Ministry of Science and ICT), Korea, under ITRC (Information Technology Research Center) support program (IITP-2019-2018-0-01421) supervised by IITP (Institute for Information & Communications Technology Promotion).
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Kim, T., Kim, K. Analysis of the 4H-SiC Contact Resistance according to the Composition Ratio of Co to Si. J. Korean Phys. Soc. 76, 506–511 (2020). https://doi.org/10.3938/jkps.76.506
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DOI: https://doi.org/10.3938/jkps.76.506