Abstract
Non-stoichiometric Ag-In-Se (AIS) thin films were prepared using co-sputtering with InSe2 and Ag targets followed by rapid thermal annealing. The internal stress of the non-stoichiometric AIS thin films was strongly affected by the deviation from molecularity, Δm. When Δm was far from stoichiometry, the non-stoichiometric AIS thin films showed better crystallinity. The improvement in the crystallinity and the release of internal stress led to a reduction in the optical band gap from 1.63 to 1.19 eV and in the resistivity from 6.45 × 10−2 to 3.21 × 10−3 Ω·cm for the non-stoichiometric AIS thin films, with a similar tendency for the deviation from molecularity, Δm. The non-stoichiometric AIS thin films, with Δm < 0 and Δs < 0, exhibited n-type conductivity with carrier concentrations on the order of magnitude of 1018 cm−3. The mean absorbance of the 200-nm-thick non-stoichiometric AIS thin films was 1.50, corresponding to an absorption of approximately 96.84 % of the incident light in the visible region.
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Kim, NH., Yoo, M.H., Ko, P.J. et al. Deviations from stoichiometry and molecularity in non-stoichiometric Ag-In-Se thin films: Effects on the optical and the electrical properties. Journal of the Korean Physical Society 69, 1817–1823 (2016). https://doi.org/10.3938/jkps.69.1817
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DOI: https://doi.org/10.3938/jkps.69.1817