Abstract
This work presents a method for controlling the wettability of an aluminum-hydroxide (Al(OH)3) nanostructure by using ion implantation. We implant Xe ions into Al(OH)3 nanostructures at dosages between 5 × 1014 to 1 × 1016 ions/cm2. The microscopic surface morphology of the nanostructure after implantation does not change under our dosing conditions. However, a drastic increase in the surface contact angle (CA) from 0° to 100° is observed at a dosage of 5 × 1015 ions/cm2. We attribute this significant change in CA to the composition and chemical bonding states of carbon contained within the Al(OH)3 nanostructure.
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H. Irie, T. S. Ping, T. Shibata and K. Hashimoto, Electrochem. Solid-State Lett. 8, D23, (2005).
R. Wang, K. Hashimoto, A. Fujishima, M. Chikuni, E. Kojima, A. Kitamura, M. Shimohigoshi and T. Watanabe, Nature 388, 431 (1997).
Y. Zhou, B. Wang, X. Song, E. Li, G. Li, S. Zhao and H. Yan, Appl. Surf. Sci. 253, 2690 (2006).
X. Zhang, F. Shi, J. Niu, Y. Jiang and Z. Wang, J. Mater. Chem. 18, 621 (2008).
D. Hegemann, H. Brunner and C. Oehr, Nucl. Instr. Meth. Phys. Res. B: Beam interact. Mater. atoms 208, 281 (2003).
T. Young, Philosoph. Trans. Roy. Soc. London 95, 65 (1805).
R. N. Wenzel, Indust. Engineer. Chem. 28, 988 (1936).
A. Cassie and S. Baxter, Trans. Faraday Soc. 40, 546 (1944).
B. Liu, Y. He, Y. Fan and X. Wang, Macromol. Rapid Commun. 27, 1859 (2006).
Z. Yoshimitsu, A. Nakajima, T. Watanabe and K. Hashimoto, Langmuir 18, 5818 (2002).
J. Lai, B. Sunderland, J. Xue, S. Yan, W. Zhao, M. Folkard, B. D. Michael and Y. Wang, Appl. Surf. Sci. 252, 3375 (2006).
N. Zhao, F. Shi, Z. Wang and X. Zhang, Langmuir 21, 4713 (2005).
J. Ou, W. Hu, M. Xue, F. Wang and W. Li, ACS Appl. Mater. Interfaces 5, 3101 (2013).
S. Yoshiaki, K. Masahiro and I. Masaya, Nucl. Instr. Meth. Phys. Res. B: Beam Interact. Mater. Atoms 91, 584 (1994).
E. J. Lee, C. Jung, I. Hwang, J. Choi, S. O. Cho and Y. Nho, ACS Appl. Mater. Interfaces 3, 2988 (2011).
Y. Bae, J. Jeon, C. Jung and D. Choi, J. Mech. Sci. Tech. 28, 3219 (2014).
B. D. Ahn, J. H. Lim, M. Cho, J. S. Park and K. B. Chung, J. Phys. D 45, 415307 (2012).
J. A. Rotole and P. M. Sherwood, J. Vacuum Sci. & Tech. A 17, 1091 (1999).
M. J. Kim, Y. Jeong, S. Sohn, S. Y. Lee, Y. J. Kim, K. Lee, Y. H. Kahng and J. H. Jang, AIP Adv. 3, 012117 (2013).
N. Vandencasteele and F. Reniers, J. Electron Spect. Related Phenom. 178, 394 (2010).
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Jeon, J., Choi, D., Kim, H. et al. Wettability conversion of an aluminum-hydroxide nanostructure by ion implantation. Journal of the Korean Physical Society 68, 1024–1028 (2016). https://doi.org/10.3938/jkps.68.1024
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DOI: https://doi.org/10.3938/jkps.68.1024