Abstract
Low-cost synthesis of high-quality ZnS films on silicon wafers is of much importance to the ZnSbased heterojunction blue light-emitting device integrated with silicon. Thus, a series of ZnS films were chemically synthesized at low cost on Si(100) wafers at 353 K under a mixed acidic solution with a pH of 4 with zinc acetate and thioacetamide as precursors and with ethylenediamine and hydrochloric acid as the complexing agent and the pH value modifier, respectively. The effects of the ethylenediamine concentration on the crystallization, surface morphology, and optical properties of the ZnS films were investigated by using X-ray diffractometry, scanning electron microscopy, spectrophotometry, and fluorescence spectroscopy. A mechanism for the formation of ZnS film under an acidic condition was also proposed. All of the ZnS films were polycrystalline in nature, with a dominant cubic phase and a small amounts of hexagonal phases. The crystallization and the surface pattern of the films were clearly improved with increasing ethylenediamine concentration due to its enhanced complexing role. The absorption edge of the films almost underwent a blue shift with increasing ethylenediamine concentration, which was largely attributed to the quantum confinement effects caused by the small particle size of the polycrystalline ZnS films. Defect species and the corresponding strengths of the ZnS films were strongly affected by the ethylenediamine concentration.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
S. Coe, W. K. Woo, M. Bawendi and V. Bulovic, Nature 420, 800 (2002).
M. C. Beard, G. M. Turner and C. A. Schmuttenmaer, Nano Lett. 2, 983 (2002).
R. P. Raffaelle, S. L. Castro, A. F. Hepp and S. G. Bailey, Prog. Photovoltaics 10, 433 (2002).
V. I. Klimov, A. A. Mikhailovsky, S. Xu, A. Malko, J. A. Hollingsworth, C. A. Leatherdale, H. J. Eisler and M. G. Bawendi, Science 290, 314 (2000).
D. Gal, G. Hodes, D. Lincot and H. W. Schock, Thin Solid Films 361–362, 79 (2000).
Y. Kavanagh and D. C. Cameron, Thin Solid Films 398–399, 24 (2001).
D. Barreca, A. Gasparotto, C. Maragno, E. Tondello and C. Sada, Chem. Vapour Depos. 10, 229 (2004).
H. Murray and A. Tosser, Thin Solid Films 24, 165 (1974).
X. H. Cheng, Z. R. Song and Y. H. Yu, Rare Metal Mater. Eng. 35, 1192 (2006).
L. X. Rong, Q. Li, R. P. Li, C. Z. Zhang, H. Q. Cong and X. Q. Song, Acta Scientiarum Naturalium Universitatis Neimongol. 30, 454 (1999)(in Chinese).
P. O’Brien and J. McAleese, Mater. Chem. 8, 2309 (1998).
K. Y. Rajpure, A. L. Dhebe, C. D. Lokhande and C. H. Bhosale, Mater. Chem. Phys. 56, 177 (1998).
L. I. Berger, Semiconductor Materials (CRC, Boca Raton, 1997), p. 86.
Y. J. Hsiao, C. W. Liu, B. T. Dai and Y. H. Chang, J. Alloys Compd. 475, 698 (2009).
J. Tauc, Amorphous and Liquid Semiconductor (Plenum, New York, 1974), p. 159.
S. D. Sartale, B. R. Sankapal, M. Lux-Steiner and A. Ennaoui, Thin Solid Films 480–481, 168 (2005).
B. Bodo and P. Kalita, in Proc. AIP, Conf, Proc. 1276, 3 (2010).
H. Y. Lu and S. Y. Chu, J. Crystal Growth 265, 476 (2004) (in Chinese).
R. N. Bhargava and D. Gallagher, Phys. Rev. Lett. 72, 416 (1994).
M. Godlewski and M. Skowronski, Phys. Rev. B 32, 4007 (1985).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zhu, HJ., Wang, XM. & Gao, XY. Synthesis of ZnS films on Si(100) wafers by using chemical bath deposition assisted by the complexing agent ethylenediamine. Journal of the Korean Physical Society 67, 366–370 (2015). https://doi.org/10.3938/jkps.67.366
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.67.366