Abstract
The results from visualizing the structure and identifying the composition of surface and the nearsurface layers of CZ n-Si (100) implanted by 64Zn+ ions with dose of 5 × 1016 cm–2 and energy of 50 keV under conditions of a substrate heated to 350°C are presented. It is found that there is no Si amorphization after Zn implantation, and only one layer 200 nm thick forms and is damaged because of radiation-induced defects. Zn nanoparticles 10–100 nm in size are found on a sample’s surface and in its near-surface layer. Computer analysis and mapping of the elemental and phase composition of FIB crater walls and the surface show that the main elements (54%) in the sample near-surface layer are Si, O, and Zn. The presence of ZnO phase is recorded to a depth of 20 nm in the sample.
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Original Russian Text © V.V. Privezentsev, V.S. Kulikauskas, V.V. Zatekin, E.P. Kirilenko, A.V. Goryachev, A.A. Batrakov, 2016, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2016, Vol. 80, No. 2, pp. 168–174.
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Privezentsev, V.V., Kulikauskas, V.S., Zatekin, V.V. et al. Investigating 64Zn+ ion-doped silicon under conditions of hot implantation. Bull. Russ. Acad. Sci. Phys. 80, 149–155 (2016). https://doi.org/10.3103/S1062873816020246
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DOI: https://doi.org/10.3103/S1062873816020246