Abstract
The thermodynamic modeling of the deposition of the condensed phase of a complex composition has been performed in the Si-C-N-O-H system in the broad temperature range of 300–1300 K under total pressure P 0total = 6−7×10−2 Torr and residual air pressure in reactor P res = 5 × 10−3 Torr using the initial gas mixtures of organosilicon compound, hexamethyldisilazane (HMDS), with nitrogen, oxygen, air mixture (O2 + 4N2), and a variable mixture of oxygen with nitrogen (O2 + xN2). The temperature boundaries of multiphase ranges, where one can anticipate the deposition of silicon oxycarbonitride, silicon oxycarbides, and silicon oxynitride, have been determined.
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Original Russian Text © A.N. Golubenko, N.I. Fainer, E.F. Titova, 2015, published in Fizika i Khimiya Stekla.
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Golubenko, A.N., Fainer, N.I. & Titova, E.F. Hydrogenated silicon oxycarbonitride films. Part III. Thermodynamic modeling of the Si-C-N-O-H system. Glass Phys Chem 41, 334–339 (2015). https://doi.org/10.1134/S1087659615030062
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DOI: https://doi.org/10.1134/S1087659615030062