Abstract
Degradation of nonalloyed ohmic contacts with heavily doped GaN epitaxially grown to the heterostructures with two-dimensional electron gas has been investigated. The change in the relative contact resistivity at temperatures of up to 600°C for the Ti/Pd/Au, Cr/Au, and Cr/Pd/Au metallization compositions has been studied. It is demonstrated that the Cr/Pd/Au metallization composition, the resistivity of which decreases at working temperatures of 400°C, is the most resistant to the effect of temperature. It is shown for the first time that the largest contribution to the increase in the contact resistivity to two-dimensional electron gas upon heating above 400°C is made by the resistivity of the Cr/Pd/Au–n+-GaN metal–dielectric structure, while, at temperatures of 400°C and higher, the resistance between heavily doped GaN and two-dimensional electron gas decreases.
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Original Russian Text © A.Yu. Pavlov, V.Yu. Pavlov, D.N. Slapovskiy, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 22, pp. 96–103.
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Pavlov, A.Y., Pavlov, V.Y. & Slapovskiy, D.N. The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures. Tech. Phys. Lett. 43, 1043–1046 (2017). https://doi.org/10.1134/S1063785017110281
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DOI: https://doi.org/10.1134/S1063785017110281