Abstract
It is shown that molecular-beam-epitaxy technology can be used to fabricate heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm with an active region comprising 50 cascades based on a heterojunction of In0.53Ga0.47As/Al0.48In0.52As solid solutions. The optical emission is obtained using a quantum-cascade design operating on the principle of two-phonon resonance scattering. The properties of heterostructures were studied by the methods of X-ray diffraction and transmission electron microscopy, which showed their high quality with respect to the identical compositions and thicknesses of all 50 cascades. Stripe-geometry lasers made of these heterostructures exhibited lasing with a threshold current density below 1.6 kA/cm2 at a temperature of 78 K.
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Original Russian Text © A.V. Babichev, A.G. Gladyshev, A.V. Filimonov, V.N. Nevedomskii, A.S. Kurochkin, E.S. Kolodeznyi, G.S. Sokolovskii, V.E. Bugrov, L.Ya. Karachinsky, I.I. Novikov, A. Bousseksou, A.Yu. Egorov, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 14, pp. 64–71.
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Babichev, A.V., Gladyshev, A.G., Filimonov, A.V. et al. Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 μm. Tech. Phys. Lett. 43, 666–669 (2017). https://doi.org/10.1134/S1063785017070173
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DOI: https://doi.org/10.1134/S1063785017070173