Abstract
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.
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S. Strite and H. Morkoc, J. Vac. Sci. Technol. 10, 1237 (1992).
T. Yamaguchi, T. Araki, Y. Saito, K. Kano, H. Kanazawa, Y. Nanishi, N. Teraguchi, and A. Suzuki, J. Cryst. Growth 237–239, 993 (1994).
K. Masu, Y. Nakamura, T. Yamazaki, T. Shibata, M. Takahashi, and K. Tsubouchi, Jpn. J. Appl. Phys. 34 (6B), 760 (1995).
K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, and S. Minagawa, J. Appl. Phys. 79, 3487 (1996).
Ch. Heinlein, J. Grepstad, T. Berge, and H. Riechert, Appl. Phys. Lett. 71, 341 (1997).
A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, Ph. Komninou, Th. Kehagias, and Th. Karakostas, Phys. Status Solidi A 188, 567 (2001).
F. Dwikusuma and T. F. Kuech, J. Appl. Phys. 94, 5656 (2003).
B. Agnarsson, M. Göthelid, S. Olafsson, H. P. Gislason, and U. O. Karlsson, J. Appl. Phys. 101, 013519 (2007).
N. Grandjean, J. Massies, and M. Leroux, J. Appl. Phys. 69, 2071 (1996).
M. Yeadon, M. T. Marshall, F. Hamdani, S. Pekin, H. Morkoc, and J. Murray Gibson, J. Appl. Phys. 83, 2847 (1998).
T. Malin, V. Mansurov, Y. Galitsyn, and K. Zhuravlev, Phys. Status Solidi C 11, 613 (2014).
T. Malin, V. Mansurov, Y. Galitsyn, and K. Zhuravlev, Phys. Status Solidi C 12, 443 (2015).
Y. Wu, A. Hanlon, J. F. Kaeding, R. Sharma, P. T. Fini, S. Nakamura, and J. S. Speck, Appl. Phys. Lett. 84, 912 (2004).
W.-G. Hu, Ch.-M. Jiao, H.-Y. Wei, P.-F. Zhang, T. T. Kang, R.-Q. Zhang, and X.-L. Liu, Chin. Phys. Lett. 25, 4364 (2008).
K. S. Kim, K. Y. Lim, and H. J. Lee, Semicond. Sci. Technol. 14, 557 (1999).
L.-C. Le, D.-G. Zhao, L.-L. Wu, Y. Deng, D.-S. Jiang, J.-J. Zhu, Z.-S. Liu, H. Wang, S.-M. Zhang, B.-S. Zhang, and H. Yang, Chin. Phys. B 20, 127306 (2011).
W. Kim, M. Yeadon, A. E. Botchkarev, S. N. Mohammad, J. M. Gibson, and H. Morkoc, J. Vac. Sci. Technol. B 15, 921 (1997).
C. L. Freeman, F. Claeyssens, and N. L. Allan, Phys. Rev. Lett. 96, 066102 (2006).
C. J. F. Solano, A. Costales, E. Francisco, A. M. Pendas, M. A. Blanco, K.-C. Lau, H. He, and R. Pandey, J. Phys. Chem. C 112, 6667 (2008).
A. Yoshikawa and K. Takahashi, Phys. Status Solidi A 188, 625 (2001).
F. Liu, R. Collazo, S. Mita, Z. Sitar, G. Duscher, and S. J. Pennycook, J. Appl. Phys. Lett. 91, 203115 (2007).
J. Ohta, H. Fujioka, M. Oshima, K. Fujiwara, and A. Ishii, Appl. Phys. Lett. 83, 3075 (2003).
S. K. Davidsson, J. F. Falth, X. Y. Liu, H. Zirath, and T. G. Andersson, J. Appl. Phys. 98, 016109 (2005).
K. Xu, N. Yano, A. W. Jia, A. Yoshikawa, and K. Takahashi, J. Cryst. Growth 237–239, 1003 (2002).
Y. S. Park, H. S. Lee, J. H. Na, H. J. Kim, S. M. Si, H. M. Kim, and J. E. Oh, J. Appl. Phys. 94, 800 (2003).
D. H. Lim, K. Xu, S. Arima, A. Yoshikawa, and K. Takahashi, J. Appl. Phys. 91, 6461 (2002).
Y. Wang, A. S. Ozcan, G. Ozaydin, K. F. Ludwig, Jr., A. Bhattacharyya, Th. D. Moustakas, H. Zhou, R. L. Headrick, and D. P. Siddons, Phys. Rev. B 74, 235304 (2006).
J. V. Lauritsen, M. C. R. Jensen, K. Venkataramani, B. Hinnemann, S. Helveg, B. S. Clausen, and F. Besenbacher, Phys. Rev. Lett. 103, 076103 (2009).
A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, and J. E. Nortrhrup, Phys. Rev. Lett. 79, 3934 (1997).
A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Nortrhrup, Surf. Sci. 423, 70 (1999).
N. Kumagai, K. Akiyama, R. Togashi, H. Murakami, M. Takeuchi, T. Kinoshita, K. Takada, Y. Aoyagi, and A. Koukitu, J. Cryst. Growth 305, 366 (2007).
O. Ambacher, J. Phys. D 31, 2653 (1998).
C. G. Dunn and E. F. Koch, Acta Metall. 5, 548 (1957).
L. Filippidis, H. Siegle, A. Hoffmann, C. Thomsen, K. Karch, and F. Bechstedt, Phys. Status Solidi B 198, 621 (1996).
G. G. Stoney, Proc. R. Soc. London 82 (553), 172 (1909).
T. Prokofyeva, M. Seon, J. Vanbuskirk, and M. Holtz, Phys. Rev. B 63, 125313 (2001).
R. W. Hoffman, Thin Solid Films 34, 185 (1976).
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Original Russian Text © T.V. Malin, D.S. Milakhin, V.G. Mansurov, Yu.G. Galitsyn, A.S. Kozhuhov, V.V. Ratnikov, A.N. Smirnov, V.Yu. Davydov, K.S. Zhuravlev, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 6, pp. 643–650.
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Malin, T.V., Milakhin, D.S., Mansurov, V.G. et al. Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers. Semiconductors 52, 789–796 (2018). https://doi.org/10.1134/S1063782618060143
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DOI: https://doi.org/10.1134/S1063782618060143