Abstract
Homogeneous Sb-doped single crystals of Ge–Si solid solutions are grown with a silicon content of 0.2 to 0.8 at %. The optical absorption of single crystals with a resistivity of (2–3) Ω cm is studied by IR Fourier spectroscopy at a wavelength of 10.6 μm in the temperature range from 25 to 60°C. It is found that the introduction of silicon into antimony-doped germanium improves the temperature stability of the optical properties of the crystals.
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Original Russian Text © A.F. Shimanskii, T.O. Pavlyuk, S.A. Kopytkova, R.A. Filatov, A.N. Gorodishcheva, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 2, pp. 276–279.
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Shimanskii, A.F., Pavlyuk, T.O., Kopytkova, S.A. et al. Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics. Semiconductors 52, 264–267 (2018). https://doi.org/10.1134/S1063782618020161
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DOI: https://doi.org/10.1134/S1063782618020161