Abstract
The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.
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Original Russian Text © S.A. Blokhin, M.A. Bobrov, A.A. Blokhin, A.G. Kuzmenkov, A.P. Vasil’ev, Yu.M. Zadiranov, E.A. Evropeytsev, A.V. Sakharov, N.N. Ledentsov, L.Ya. Karachinsky, A.M. Ospennikov, N.A. Maleev, V.M. Ustinov, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 1, pp. 98–104.
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Blokhin, S.A., Bobrov, M.A., Blokhin, A.A. et al. Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells. Semiconductors 52, 93–99 (2018). https://doi.org/10.1134/S1063782618010062
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DOI: https://doi.org/10.1134/S1063782618010062