Abstract
Photoemission studies of the electronic structure of the Cs/nano-SiC/Si(111)-4° nanointerface are for the first time carried out with the use of synchrotron radiation in the photon energy range 120–450 eV. The in situ experiments are conducted in the case of submonolayer Cs coating of the surface of an epitaxial SiC layer grown on the vicinal surface Si(111)-4° by a new method of substrate-atom substitution. Modification of the valence-band spectra and the C 1s and Si 2p core levels is studied. The appearance of Cs-induced surface states, with binding energies of 1.2 and 7.4 eV, and a sharp change in the spectrum of the C 1s core level with the appearance of two additional modes are found. The evolution of the spectra shows that the Cs/nano-SiC/Si(111)-4° interface is formed due to charge transfer from Cs adatoms to surface atoms at terraces and steps of the vicinal surface. It is found that the structure of the C layer is nontrivial and involves energetically different carbon states.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
S. E. Saddow and A. Agrawal, Advances in Silicon Carbide Processing and Applications (Artech House, Boston, 2004).
P. Soukiassian and H. B. Enriquez, J. Phys.: Condens Matter 16, 1611 (2004).
T. Seyller, J. Phys.: Condens Matter 16, 1755 (2004).
V. van Elsbergen, T. U. Kampen, and W. Monch, J. Appl. Phys. 79, 316 (1996).
C. Virojanadara and L. I. Johansson, Surf. Sci. 600, 436 (2006).
L. I. Johansson and C. Virojanadara, Phys. Status Solidi B 248, 667 (2011).
B. Wenzien, P. Kackell, F. Bechstedt, and G. Cappellini, Phys. Rev. B 52, 10897 (1995).
V. M. Bermudez and J. P. Long, Appl. Phys. Lett. 66, 475 (1995).
H. W. Yeom, Y.-C. Chao, I. Matsuda, S. Hara, S. Yoshida, and R. I. G. Uhrberg, Phys. Rev. B 58, 10540 (1998).
S. A. Kukushkin and A. V. Osipov, J. Appl. Phys. 113, 024909 (2013).
S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).
S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56, 1507 (2014).
S. A. Kukushkin and A. V. Osipov, Tech. Phys. Lett. 42, 259 (2016).
B. Wenzien, P. Kackell, F. Bechstedt, and G. Cappellini, Phys. Rev. B 52, 10897 (1995).
V. M. Bermudez and J. P. Long, Appl. Phys. Lett. 66, 475 (1995).
H. W. Yeom, Y.-C. Chao, I. Matsuda, S. Hara, S. Yoshida, and R. I. G. Uhrberg, Phys. Rev. B 58, 10540 (1998).
F. Semond, P. Soukiassian, P. S. Mangat, Z. Hurych, L. di Cioccio, and C. Jaussand, Appl. Surf. Sci. 104–105, 79 (1996).
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, B. Senkovskiy, and S. N. Timoshnev, Mater. Phys. Mech. 22, 183 (2015).
G. Ferro, Crit. Rev. Solid State Mater. Sci. 40, 56 (2015).
A. G. Fedorus, A. G. Naumovets, and Yu. S. Vedula, Phys. Status Solidi A 13, 445 (1972).
S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 21, 165 (1994).
P.-A. Glans, T. Balasubramanian, M. Syvajarvi, R. Yakimova, and L. I. Johansson, Surf. Sci. 470, 284 (2001).
R. Verucchi, L. Aversa, M. V. Nardi, S. Taioli, S. Beccara, D. Alfè, L. Nasi, F. Rossi, G. Salviati, and S. Iannotta, J. Am. Chem. Soc. 134, 17400 (2012).
L. I. Johansson, F. Owman, and P. Martensson, Phys. Rev. B 53, 19793 (1996).
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, B. V. Senkovsky, and S. N. Timoshnev, Semiconductors 50, 457 (2016).
C. H. Park, B.-H. Cheong, K.-H. Lee, and K. J. Chang, Phys. Rev. B 49, 4485 (1994).
L. Wenchang, Y. Weidong, and Z. Kaiming, J. Phys.: Condens. Matter 3, 9079 (1991).
J. Wang, L. Zhang, Q. Zeng, G. L. Vignoles, L. Cheng, and A. Guette, Phys. Rev. B 79, 125304 (2009).
R. Takahashi, H. Handa, K. Imaizumi, H. Fukidome, A. Yoshigoe, Yu. Teraoka, and M. Suemitsu, Jpn. J. App. Phys. 50, 070103 (2011).
L. B. Biedermann, M. L. Bolen, M. A. Capano, D. G. Zemlyanov, and R. Reifenberger, Phys. Rev. B 79, 125411 (2009).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © G.V. Benemanskaya, P.A. Dementev, S.A. Kukushkin, M.N. Lapushkin, A.V. Osipov, B.V. Senkovskiy, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 10, pp. 1348–1352.
Rights and permissions
About this article
Cite this article
Benemanskaya, G.V., Dementev, P.A., Kukushkin, S.A. et al. The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface. Semiconductors 50, 1327–1332 (2016). https://doi.org/10.1134/S1063782616100080
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616100080