Abstract
Solar-cell heterostructures based on GaAs/InGaAsN materials with an InAs/GaAsN superlattice, grown by molecular beam epitaxy, are studied. A p-GaAs/i-(InAs/GaAsN)/n-GaAs p–i–n test solar cell with a 0.9-μm-thick InGaAsN layer has an open-circuit voltage of 0.4 V (1 sun, AM1.5G) and a quantum efficiency of >0.75 at a wavelength of 940 nm (at zero reflection loss), which corresponds to a short-circuit current of 26.58 mA/cm2 (AM1.5G, 100 mW/cm2). The high open-circuit voltage demonstrates that InGaAsN can be used as a material with a band gap of 1 eV in four-cascade solar cells.
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Original Russian Text © E.V. Nikitina, A.S. Gudovskikh, A.A. Lazarenko, E.V. Pirogov, M.S. Sobolev, K.S. Zelentsov, I.A. Morozov, A.Yu. Egorov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 5, pp. 663–667.
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Nikitina, E.V., Gudovskikh, A.S., Lazarenko, A.A. et al. GaAs/InGaAsN heterostructures for multi-junction solar cells. Semiconductors 50, 652–655 (2016). https://doi.org/10.1134/S106378261605016X
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DOI: https://doi.org/10.1134/S106378261605016X