Abstract
The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3° in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 × 104 cm–1 in low-angle boundaries to 6 × 104 cm–1 in subboundaries.
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Original Russian Text © I.B. Parfenteva, B.V. Pugachev, V.F. Pavlov, Yu.P. Kozlova, C.N. Knyazev, T.G. Yugova, 2017, published in Kristallografiya, 2017, Vol. 62, No. 2, pp. 259–263.
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Parfenteva, I.B., Pugachev, B.V., Pavlov, V.F. et al. Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method. Crystallogr. Rep. 62, 275–278 (2017). https://doi.org/10.1134/S1063774517020201
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DOI: https://doi.org/10.1134/S1063774517020201