Abstract
A combined procedure has been developed for the analysis of high-purity silicon with preliminary vapor-phase digestion and preconcentration in a microwave oven using inductively coupled plasma atomic emission spectrometry (ICP-AES). Liners for high-pressure vessels of microwave oven ensuring the simultaneous distillation of matrices from 3–4 samples without their contact with the acid solution have been designed and manufactured. The procedure ensures the determination of up to 30 elements: Ag, Al, Be, Bi, Ca, Cd, Co, Cr, Cu, Fe, Ga, Hf, In, K, Li, Mn, Mo, Na, Nb, Ni, P, Rb, Sb, Sn, Sr, Ta, V, W, Zn, and Zr with the limits of detection 10−8 −10−6 wt %.
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Original Russian Text © A.V. Shaverina, A.R. Tsygankova, A.I. Saprykin, 2015, published in Zhurnal Analiticheskoi Khimii, 2015, Vol. 70, No. 1, pp. 26–29.
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Shaverina, A.V., Tsygankova, A.R. & Saprykin, A.I. A procedure of ICP-AES analysis of silicon using microwave digestion and preconcentration. J Anal Chem 70, 28–31 (2015). https://doi.org/10.1134/S1061934815010153
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DOI: https://doi.org/10.1134/S1061934815010153