Abstract
The results of experimental investigation of the surface layer of polycrystalline diamond modified by high-fluence (≥1018 cm–2) 30-keV Ar+ ion irradiation are presented. The reflection high-energy electron diffraction (RHEED) patterns, Raman spectra, and temperature dependences of the electrical resistance are analyzed. It is found that depending on the irradiation conditions and temperature treatment of diamond a modified layer is formed with either a disorderd structure and semiconductor conductivity or the graphite structure and metallic conductivity.
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Original Russian Text © V.A. Anikin, A.M. Borisov, V.A. Kazakov, A.V. Kudrin, E.S. Mashkova, A.I. Morkovkin, M.A. Ovchinnikov, E.A. Pitirimova, 2018, published in Poverkhnost’, 2018, No. 8, pp. 74–80.
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Anikin, V.A., Borisov, A.M., Kazakov, V.A. et al. Effect of High-Fluence Ion Irradiation on the Structure and Electrical Properties of Polycrystalline Diamond. J. Surf. Investig. 12, 801–806 (2018). https://doi.org/10.1134/S1027451018040237
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DOI: https://doi.org/10.1134/S1027451018040237