Abstract
Using single-crystal n-GaN as an example, some possibilities of a procedure for quantitative cathodoluminescence of the direct-gap material are considered. This procedure is based on using the dependence of the cathodoluminescence intensity on the beam-electron energy at a constant level of electron-hole pair generation. Estimates of the diffusion length and the lifetime of free excitons and of the spectral dependence of the coefficient of recombination-radiation self-absorption are obtained using this procedure.
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Original Russian Text © N.A. Nikiforova, M.A. Stepovich, N.N. Mikheev, M. Hocker, I. Tischer, 2015, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2015, No. 8, pp. 84–88.
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Nikiforova, N.A., Stepovich, M.A., Mikheev, N.N. et al. Measurement of the diffusion length and the lifetime of free excitons in gallium nitride using cathodoluminescence under different conditions of luminescence excitation. J. Surf. Investig. 9, 839–843 (2015). https://doi.org/10.1134/S102745101504031X
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DOI: https://doi.org/10.1134/S102745101504031X