Abstract
A stepwise scheme has been proposed for gaining insight into the nanopore formation process in silicon during electrolytic etching in hydrofluoric acid solutions. We have studied the influence of the concentration and nature of dopants (phosphorus, arsenic, and antimony) in silicon, current density, electric field strength, and etching time on the axial and radial pore sizes and the pore distribution density. The dopants have been shown to play a predominant role in the nanopore formation process. The shape and spatial orientation of nanopores in Si substrates with the (100) and (111) crystallographic orientations have been interpreted in terms of specific features of the electrochemical etching of silicon in hydrofluoric acid solutions, related to the action of the etching ion (HF2)−. The observed discrepancy between the experimentally determined and calculated radial nanopore sizes has been accounted for by the low probability ( 6.25%) of simultaneous interaction of the fluorine atoms of an (HF2)− ion with the corresponding silicon atoms located at vertices of a cube of the crystal lattice.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Ksenofontova, O.I., Vasin, A.V., Egorov, V.V., Bobyl’, A.V., Soldatenkov, F.Yu., Terukov, E.I., Ulin, V.P., and Kiselev, O.I., Porous silicon and its applications in biology and medicine, Tech. Phys., 2014, vol. 84, no. 1, pp. 66–77.
Belous, A.O., Biomedical applications of porous silicon, Molodoi Uchenyi, 2013, no. 8, pp. 69–74.
Ishchenko, A.A., Fetisov, G.V., and Aslanov, P.A., Nanokremnii: svoistva, poluchenie, primenenie, metody ispol’zovaniya i kontrolya (Nanosilicon: Properties, Preparation, Applications, and Techniques for Use and Control), Moscow: FIZMATLIT, 2011.
Gavrilov, S.A. and Belov, A.N., Elektrokhimicheskie protsessy v tekhnologii mikro- i nanoelektroniki (Electrochemical Processes in Micro- and Nanoelectronics Technologies), Moscow: RIOR INFRA-M, 2014.
Yuzova, V.A., Levitskii, A.A., and Kharlashin, P.A., Advances in the preparation and characterization of porous silicon, J. Sib. Fed. Univ. Eng. Technol., 2011, vol. 4, pp. 92–112.
Churaman, W.A. and Currano, L., Preparation of nanoporous silicon, Army Res. Lab., 2012, p. 22.
Goryachev, D.N., Belyakov, L.V., and Sreselli, O.M., Electrolytic fabrication of porous silicon with the use of internal current source, Semiconductors, 2003, vol. 37, no. 4, pp. 477–481.
Tynyshtykbaev, K.B., Ryabikin, Yu.A., Tokmoldin, S.Zh., Aitmukan, T., Rakymetov, B.A., and Vermenichev, R.B., Morphology of porous silicon after long-term internal current source anodic etching in electrolyte, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2010, vol. 36, no. 11, pp. 104–110.
Zalkind, Ya.G., Physicomathematical properties of silicon nanostructures as a technologically attractive material for microcircuit engineering, Cand. Sci. (Chem.) Dissertation, Moscow, 2006.
Abramova, E.N., Gvelesiani, A.A., Khort, A.M., and Yakovenko, A.G., Effect of the content of hydrogen fluoride in an etchant on the formation of nanopores in silicon during electrolytic etching, Russ. J. Inorg. Chem., 2014, vol. 59, no. 11, pp. 1328–1332.
Kompan, M.E., Mechanism of primary self-organization of the regular structure of porous silicon, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2003, vol. 45, no. 5, pp. 1130–1134.
Akhmetov, N.S., Neorganicheskaya khimiya (Inorganic Chemistry), Moscow: Vysshaya Shkola, 1988.
Rabinovich, V.A. and Khavin, Z.Ya., Kratkii spravochnik khimika (Concise Chemist’s Handbook), Leningrad: Khimiya, 1977.
Seeger, K., Semiconductor Physics, New York: Springer, 1977.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © E.N. Abramova, A.M. Khort, A.G. Yakovenko, V.I. Shvets, 2015, published in Neorganicheskie Materialy, 2015, Vol. 51, No. 8, pp. 815–822.
Rights and permissions
About this article
Cite this article
Abramova, E.N., Khort, A.M., Yakovenko, A.G. et al. Nanopore formation during electrolytic etching of silicon in hydrofluoric acid solutions. Inorg Mater 51, 747–753 (2015). https://doi.org/10.1134/S0020168515080014
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020168515080014