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Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

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Abstract

The development of high-performance electronic devices based on two-dimensional (2D) transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of-principle demonstrations to more reproducible integrated devices. It has, in particular, reached a point where the material quality—as well as the interfaces between the metal contacts, dielectrics and 2D semiconductors—must be optimized to increase device performance. Here we examine the key immediate challenges for the development of electronics based on 2D transition metal dichalcogenides, and identify doping, p-type contacts and high-dielectric-constant dielectrics as critical issues. We argue that these challenges stem from the high density of defects present in 2D transition metal dichalcogenides, and suggest that the community focus more on the growth of high-quality materials with a low concentration of defects. We also provide recommendations on identifying industry-compatible dielectrics for these 2D devices.

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Fig. 1: Defects in 2D TMDs.
Fig. 2: Electrical contacts for 2D TMDs.
Fig. 3: Oxide dielectrics for 2D TMDs.

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Acknowledgements

M.C. and Y.W. received funding from the European Research Council (ERC) Advanced Grant under the European Union’s Horizon 2020 research and innovation programme (grant agreement GA 101019828-2D- LOTTO]), Leverhulme Trust (RPG-2019-227), EPSRC (EP/ T026200/1, EP/T001038/1), Royal Society Wolfson Merit Award (WRM\FT\180009) and Department of Science, Innovation and Technology and the Royal Academy of Engineering under the Chair in Emerging Technologies programme (CiET -2324-134).

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  1. Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, UK

    Yan Wang, Soumya Sarkar, Han Yan & Manish Chhowalla

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  1. Yan Wang
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Y.W. and M.C. wrote and edited the paper. S.S. and H.Y. contributed to the contact and dielectric studies. All authors commented on the final version of the paper.

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Correspondence to Yan Wang or Manish Chhowalla.

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Wang, Y., Sarkar, S., Yan, H. et al. Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides. Nat Electron 7, 638–645 (2024). https://doi.org/10.1038/s41928-024-01210-3

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